SLPS588 March   2016 CSD18536KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE

CSD18536KTT FET_Pins.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 108 nC
Qgd Gate Charge Gate-to-Drain 14 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 1.7 mΩ
VGS = 10 V 1.3 mΩ
VGS(th) Threshold Voltage 1.8 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18536KTT 500 13-Inch Reel D2PAK Plastic Package Tape & Reel
CSD18536KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 200 A
Continuous Drain Current (Silicon limited), TC = 25°C 349 A
Continuous Drain Current (Silicon limited), TC = 100°C 247 A
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg 		Operating Junction and
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 128 A, L = 0.1 mH, RG = 25 Ω		 819 mJ
  1. Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD18536KTT D007_SLPS588.gif

Gate Charge

CSD18536KTT D004_SLPS588_FP.gif