SLPS588 March   2016 CSD18536KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.4 1.8 2.2 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 100 A 1.7 2.2 mΩ
VGS = 10 V, ID = 100 A 1.3 1.6 mΩ
gfs Transconductance VDS = 6 V, ID = 100 A 312 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 8790 11430 pF
Coss Output capacitance 1410 1840 pF
Crss Reverse transfer capacitance 39 51 pF
RG Series gate resistance 0.7 1.4 Ω
Qg Gate charge total (10 V) VDS = 30 V, ID = 100 A 108 140 nC
Qgd Gate charge gate-to-drain 14 nC
Qgs Gate charge gate-to-source 18 nC
Qg(th) Gate charge at Vth 17 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 230 nC
td(on) Turn on delay time VDS = 30 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 11 ns
tr Rise time 5 ns
td(off) Turn off delay time 24 ns
tf Fall time 4 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.0 V
Qrr Reverse recovery charge VDS= 30 V, IF = 100 A,
di/dt = 300 A/μs		 323 nC
trr Reverse recovery time 86 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.4 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD18536KTT D001_SLPS588.png
Figure 1. Transient Thermal Impedance
CSD18536KTT D002_SLPS588.gif
Figure 2. Saturation Characteristics
CSD18536KTT D003_SLPS588.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18536KTT D004_SLPS588.gif
VDS = 50 V ID = 100 A
Figure 4. Gate Charge
CSD18536KTT D006_SLPS588.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18536KTT D008_SLPS588.gif
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18536KTT D010_SLPS588.gif
Single Pulse Max RθJC = 0.4°C/W
Figure 10. Maximum Safe Operating Area
CSD18536KTT D012_SLPS588.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18536KTT D005_SLPS588.gif
Figure 5. Capacitance
CSD18536KTT D007_SLPS588.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18536KTT D009_SLPS588.gif
Figure 9. Typical Diode Forward Voltage
CSD18536KTT D011_SLPS588.gif
Figure 11. Single Pulse Unclamped Inductive Switching