SLPS390A June   2013  – March 2015 CSD18537NKCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.6 3 3.5 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 25 A 14 18
VGS = 10 V, ID = 25 A 11 14
gƒs Transconductance VDS = 30 V, ID = 25 A 100 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 1140 1480 pF
Coss Output Capacitance 136 177 pF
Crss Reverse Transfer Capacitance 4.0 5.2 pF
RG Series Gate Resistance 5.5 11 Ω
Qg Gate Charge Total (10 V) VDS = 30 V, ID = 25 A 14 18 nC
Qgd Gate Charge Gate-to-Drain 2.3 nC
Qgs Gate Charge Gate-to-Source 5.2 nC
Qg(th) Gate Charge at Vth 3.3 nC
Qoss Output Charge VDS = 30 V, VGS = 0 V 25 nC
td(on) Turn On Delay Time VDS = 30 V, VGS = 10V,
IDS = 25 A, RG = 0 Ω
4.5 ns
tr Rise Time 3.2 ns
td(off) Turn Off Delay Time 12.6 ns
tƒ Fall Time 3.9 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 25 A, VGS = 0 V 0.9 1 V
Qrr Reverse Recovery Charge VDS= 30 V, IF = 25 A,
di/dt = 300 A/μs
77 nC
trr Reverse Recovery Time 50 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 1.6 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD18537NKCS D001_SLPS390.png
Figure 1. Transient Thermal Impedance
CSD18537NKCS D002_SLPS390.gif
Figure 2. Saturation Characteristics
CSD18537NKCS D003_SLPS390.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18537NKCS D004_SLPS390.gif
ID = 25 A VDS = 30 V
Figure 4. Gate Charge
CSD18537NKCS D006_SLPS390.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18537NKCS D008_SLPS390.gif
ID = 25 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18537NKCS D010_SLPS390.gif
Single Pulse, Max RθJC = 1.6°C/W
Figure 10. Maximum Safe Operating Area (SOA)
CSD18537NKCS D012_SLPS390.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18537NKCS D005_SLPS390.gif
Figure 5. Capacitance
CSD18537NKCS D007_SLPS390.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18537NKCS D009_SLPS390.gif
Figure 9. Typical Diode Forward Voltage
CSD18537NKCS D011_SLPS390.gif
Figure 11. Single Pulse Unclamped Inductive Switching