SLPS557 June   2015 CSD18542KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 60 V, 3.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18542KCS TO220p2.png
CSD18542KCS FET_Pins.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage 60 V
Qg Gate charge total (10 V) 44 nC
Qgd Gate charge gate-to-drain 6.9 nC
RDS(on) Drain-to-source on-resistance VGS = 4.5 V 4.0
VGS = 10 V 3.3
VGS(th) Threshold voltage 1.8 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18542KCS 50 Tube TO-220 Plastic Package Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-source voltage 60 V
VGS Gate-to-source voltage ±20 V
ID Continuous drain current (package limited) 200 A
Continuous drain current (silicon limited), TC = 25°C 170
Continuous drain current (silicon limited), TC = 100°C 120
IDM Pulsed drain current (1) 400 A
PD Power dissipation 200 W
TJ,
Tstg
Operating junction,
Storage temperature
–55 to 175 °C
EAS Avalanche energy, single pulse
ID = 75 A, L = 0.1 mH, RG = 25 Ω
281 mJ
  1. Max RθJC = 0.6°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD18542KCS D007_SLPS557.gif

Gate Charge

CSD18542KCS D004_SLPS557_FP.gif