SLPS590A March   2016  – March 2017 CSD18542KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.2 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 100 A 4.0 5.1 mΩ
VGS = 10 V, ID = 100 A 3.3 4.0
gfs Transconductance VDS = 6 V, ID = 100 A 198 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 3900 5070 pF
Coss Output capacitance 570 740 pF
Crss Reverse transfer capacitance 11 14 pF
RG Series gate resistance 1.3 2.6 Ω
Qg Gate charge total (4.5 V) VDS = 30 V, ID = 100 A 21 27 nC
Qg Gate charge total (10 V) 44 57 nC
Qgd Gate charge gate-to-drain 6.9 nC
Qgs Gate charge gate-to-source 10 nC
Qg(th) Gate charge at Vth 7.3 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 63 nC
td(on) Turnon delay time VDS = 30 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 6 ns
tr Rise time 5 ns
td(off) Turnoff delay time 18 ns
tf Fall time 21 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.0 V
Qrr Reverse recovery charge VDS= 30 V, IF = 100 A,
di/dt = 300 A/μs		 148 nC
trr Reverse recovery time 53 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.6 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD18542KTT D001_SLPS590.png
Figure 1. Transient Thermal Impedance
CSD18542KTT D002_SLPS590.gif
Figure 2. Saturation Characteristics
CSD18542KTT D003_SLPS590.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18542KTT D004_SLPS590.gif
ID = 100 A VDS = 30 V
Figure 4. Gate Charge
CSD18542KTT D006_SLPS590.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18542KTT D008_SLPS590.gif
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18542KTT D010_SLPS590.gif
Single pulse, max RθJC = 0.6°C/W
Figure 10. Maximum Safe Operating Area
CSD18542KTT D012_SLPS590.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18542KTT D005_SLPS590.gif
Figure 5. Capacitance
CSD18542KTT D007_SLPS590_r2.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18542KTT D009_SLPS590.gif
Figure 9. Typical Diode Forward Voltage
CSD18542KTT D011_SLPS590.gif
Figure 11. Single Pulse Unclamped Inductive Switching