SLPS482B December   2013  – January 2015 CSD19533KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.8 3.4 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 55 A 9.7 12.2 mΩ
VGS = 10 V, ID = 55 A 8.7 10.5 mΩ
gƒs Transconductance VDS = 10 V, ID = 55 A 115 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 2050 2670 pF
Coss Output Capacitance 395 514 pF
Crss Reverse Transfer Capacitance 9.6 12.5 pF
RG Series Gate Resistance 1.2 2.4 Ω
Qg Gate Charge Total (10 V) VDS = 50 V, ID = 55 A 27 35 nC
Qgd Gate Charge Gate-to-Drain 5.4 nC
Qgs Gate Charge Gate-to-Source 9 nC
Qg(th) Gate Charge at Vth 3.9 nC
Qoss Output Charge VDS = 50 V, VGS = 0 V 79 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 55 A, RG = 0 Ω		 7 ns
tr Rise Time 5 ns
td(off) Turn Off Delay Time 12 ns
tƒ Fall Time 2 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 55 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 50 V, IF = 55 A,
di/dt = 300 A/μs		 211 nC
trr Reverse Recovery Time 77 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.8 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS479.png
Figure 1. Transient Thermal Impedance
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Figure 2. Saturation Characteristics
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Figure 3. Transfer Characteristics
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Figure 4. Gate Charge
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Figure 6. Threshold Voltage vs Temperature
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Figure 8. Normalized On-State Resistance vs Temperature
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Figure 10. Maximum Safe Operating Area
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Figure 12. Maximum Drain Current vs Temperature
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Figure 5. Capacitance
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Figure 7. On-State Resistance vs Gate-to-Source Voltage
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Figure 9. Typical Diode Forward Voltage
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Figure 11. Single Pulse Unclamped Inductive Switching