SLPS582A July   2016  – January 2017 CSD19538Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
      1. 7.1.1 Recommended PCB Pattern
      2. 7.1.2 Recommended Stencil Pattern
    2. 7.2 Q2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • Power Over Ethernet (PoE)
  • Power Sourcing Equipment (PSE)
  • Motor Control

3 Description

This 100-V, 49-mΩ, SON 2-mm × 2-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
CSD19538Q2 P0108-01_LPS235.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 4.3 nC
Qgd Gate Charge Gate-to-Drain 0.8 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 58 mΩ
VGS = 10 V 49
VGS(th) Threshold Voltage 3.2 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD19538Q2 3000 7-Inch Reel SON
2.00-mm x 2.00-mm
Plastic Package		 Tape and Reel
CSD19538Q2T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 14.4 A
Continuous Drain Current (Silicon Limited), TC = 25°C 13.1
Continuous Drain Current(1) 4.6
IDM Pulsed Drain Current(2) 34.4 A
PD Power Dissipation(1) 2.5 W
Power Dissipation, TC = 25°C 20.2
TJ,
Tstg 		Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 12.6 A, L = 0.1 mH, RG = 25 Ω		 8 mJ
  1. Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
  2. Max RθJC = 6.2°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD19538Q2 D007_SLPS583.gif

Gate Charge

CSD19538Q2 D004_SLPS583_FP_r2.gif