SLPS583B May   2016  – October 2025 CSD19538Q3A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8.   Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

CSD19538Q3A Top View Top View
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 4.3 nC
Qgd Gate Charge Gate to Drain 0.8 nC
RDS(on) Drain-to-Source On Resistance VGS = 6V 58 mΩ
VGS = 10V 49
VGS(th) Threshold Voltage 3.2 V
Package Information
PART NUMBER MEDIA QTY PACKAGE(1) SHIP
CSD19538Q3A 13-in reel 3000 SON
3.30mm × 3.30mm(2)
Plastic package		 Tape and reel
CSD19538Q3AT 7-in reel 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-source voltage 100 V
VGS Gate-to-source voltage ±20
ID Continuous drain current (package limited) 15 A
Continuous drain current (silicon limited), TC = 25°C 14
Continuous drain current(1) 4.9
IDM Pulsed drain current(2) 37
PD Power dissipation(1) 2.8 W
Power dissipation, TC = 25°C 23
TJ Operating junction temperature –55 to 150 °C
Tstg Storage temperature
EAS Avalanche energy, single pulse
ID = 12.7A, L = 0.1mH, RG = 25Ω		 8.1 mJ
(1) Typical RθJA = 45°C/W on a 1-in2, 2oz Cu pad on a 0.06 in thick FR4 PCB.
(2) Maximum RθJC = 5.5°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
CSD19538Q3A RDS(on) versus VGS RDS(on) versus VGS
CSD19538Q3A Gate Charge Gate Charge