SLPS583B May   2016  – October 2025 CSD19538Q3A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8.   Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

CSD19538Q3A Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD19538Q3A Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19538Q3A Gate Charge
ID = 5A VDS = 50V
Figure 4-4 Gate Charge
CSD19538Q3A Threshold Voltage vs Temperature
ID = 250 µA
Figure 4-6 Threshold Voltage vs Temperature
CSD19538Q3A Normalized On-State Resistance vs Temperature
ID = 5A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19538Q3A Maximum Safe Operating Area
Single pulse, max RθJC = 5.5°C/W
Figure 4-10 Maximum Safe Operating Area
CSD19538Q3A Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19538Q3A Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD19538Q3A Capacitance
Figure 4-5 Capacitance
CSD19538Q3A On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD19538Q3A Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19538Q3A Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching