SLPS420F September   2013  – February 2022 CSD25481F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Support Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Figure 3-1 Typical Part Dimensions

Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –20 V
Qg Gate Charge Total (–4.5 V) 913 pC
Qgd Gate Charge Gate-to-Drain 153 pC
RDS(on) Drain-to-Source
On-Resistance		 VGS = –1.8 V 395 mΩ
VGS = –2.5 V 145 mΩ
VGS = –4.5 V 90 mΩ
VGS(th) Threshold Voltage –0.95 V
Ordering Information
Device(1) Qty Media Package Ship
CSD25481F4 3000 7-Inch Reel Femto(0402)
1.0 mm × 0.6 mm
Land Grid Array (LGA)		 Tape and Reel
CSD25481F4T 250 7-Inch Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-Source Voltage –20 V
VGS Gate-to-Source Voltage –12 V
ID Continuous Drain Current(1) –2.5 A
IDM Pulsed Drain Current(2) –13.1 A
IG Continuous Gate Clamp Current –35 mA
Pulsed Gate Clamp Current(2) –350
PD Power Dissipation(1) 500 mW
V(ESD) Human Body Model (HBM) 4 kV
Charged Device Model (CDM) 2 kV
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
(1) Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
GUID-EEF327C5-0957-410B-9195-988B6B073AEF-low.gif Figure 3-2 Top View