SLPS327B September 2012 – April 2018 CSD86360Q5D
MOSFET centric parameters such as RDS(ON) and Qgd are needed to estimate the loss generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has provided measured power loss performance curves. Figure 1 plots the power loss of the CSD86360Q5D as a function of load current. This curve is measured by configuring and running the CSD86360Q5D as it would be in the final application (see Figure 32).The measured power loss is the CSD86360Q5D loss and consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve.
The power loss curve in Figure 1 is measured at the maximum recommended junction temperatures of 125°C under isothermal test conditions.