SLPS598C May   2017  – January 2018 CSD88584Q5DC

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Brushless DC Motor With Trapezoidal Control
    3. 6.3 Power Loss Curves
    4. 6.4 Safe Operating Area (SOA) Curve
    5. 6.5 Normalized Power Loss Curves
    6. 6.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 6.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
      1. 6.7.1 Operating Conditions
      2. 6.7.2 Calculating Power Loss
      3. 6.7.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Considerations
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Community Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Q5DC Package Dimensions
    2. 9.2 Land Pattern Recommendation
    3. 9.3 Stencil Recommendation

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DMM|22
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

TJ = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 40 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 µA 1.2 1.7 2.3 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, IDS = 30 A 1.0 1.5
VGS = 10 V, IDS = 30 A 0.68 0.95
gfs Transconductance VDS = 4 V, IDS = 30 A 149 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 20 V,
ƒ = 1 MHz
9540 12400 pF
COSS Output capacitance 957 1240 pF
CRSS Reverse transfer capacitance 474 616 pF
RG Series gate resistance 1.0 2.0 Ω
Qg Gate charge total (4.5 V) VDS = 20 V,
IDS = 30 A
68 88 nC
Qg Gate charge total (10 V) 137 178 nC
Qgd Gate charge gate-to-drain 26 nC
Qgs Gate charge gate-to-source 24 nC
Qg(th) Gate charge at Vth 16 nC
QOSS Output charge VDS = 20 V, VGS = 0 V 42 nC
td(on) Turnon delay time VDS = 20 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω
11 ns
tr Rise time 24 ns
td(off) Turnoff delay time 53 ns
tf Fall time 17 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 30 A, VGS = 0 V 0.75 1.0 V
Qrr Reverse recovery charge VDS = 20 V, IF = 30 A,
di/dt = 300 A/µs
34 nC
trr Reverse recovery time 24 ns

CSD88584Q5DC MaxBoard.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
CSD88584Q5DC MinBoard.gif
Max RθJA = 125°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.