SLPS597C April   2017  – April 2018 CSD88599Q5DC

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings (1)
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Brushless DC Motor With Trapezoidal Control
    3. 6.3 Power Loss Curves
    4. 6.4 Safe Operating Area (SOA) Curve
    5. 6.5 Normalized Power Loss Curves
    6. 6.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 6.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Considerations
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

TJ = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 µA60V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 48 V1µA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 20 V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 µA1.42.02.5V
RDS(on)Drain-to-source on-resistanceVGS = 4.5 V, IDS = 30 A2.53.3mΩ
VGS = 10 V, IDS = 30 A1.72.1
gfsTransconductanceVDS = 6 V, IDS = 30 A130S
DYNAMIC CHARACTERISTICS
CISSInput capacitanceVGS = 0V, VDS = 30 V,
ƒ = 1 MHz		37204840pF
COSSOutput capacitance670870pF
CRSSReverse transfer capacitance1216pF
RGSeries gate resistance0.91.8Ω
QgGate charge total (4.5 V)VDS = 30 V,
IDS = 30 A		2127nC
QgGate charge total (10 V)4356nC
QgdGate charge gate-to-drain7.0nC
QgsGate charge gate-to-source10.1nC
Qg(th)Gate charge at Vth6.3nC
QOSSOutput chargeVDS = 30 V, VGS = 0 V100nC
td(on)Turnon delay timeVDS = 30 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω		9ns
trRise time20ns
td(off)Turnoff delay time23ns
tfFall time3ns
DIODE CHARACTERISTICS
VSDDiode forward voltageIDS = 30 A, VGS = 0 V0.81.0V
QrrReverse recovery chargeVDS = 30 V, IF = 30 A,
di/dt = 300 A/µs		172nC
trrReverse recovery time36ns

GUID-E832751C-041C-4D2B-9B9F-E3092F40A83D-low.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
GUID-25665E75-11F5-4DB4-B70E-6F218263354D-low.gif
Max RθJA = 125°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.