SLPS597D April   2017  – June 2024 CSD88599Q5DC

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 Recommended Operating Conditions
    3. 4.3 Power Block Performance
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Typical Power Block Device Characteristics
    7. 4.7 Typical Power Block MOSFET Characteristics
  6. 5Application and Implementation
    1. 5.1 Application Information
    2. 5.2 Brushless DC Motor With Trapezoidal Control
    3. 5.3 Power Loss Curves
    4. 5.4 Safe Operating Area (SOA) Curve
    5. 5.5 Normalized Power Loss Curves
    6. 5.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 5.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
    8. 5.8 Layout
      1. 5.8.1 Layout Guidelines
        1. 5.8.1.1 Electrical Performance
        2. 5.8.1.2 Thermal Considerations
      2. 5.8.2 Layout Example
  7. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Support Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DMM|22
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.5 Electrical Characteristics

TJ = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0V, IDS = 250µA60V
IDSSDrain-to-source leakage currentVGS = 0V, VDS = 48V1µA
IGSSGate-to-source leakage currentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250µA1.42.02.5V
RDS(on)Drain-to-source on-resistanceVGS = 4.5V, IDS = 30A2.53.3mΩ
VGS = 10V, IDS = 30A1.72.1
gfsTransconductanceVDS = 6V, IDS = 30A130S
DYNAMIC CHARACTERISTICS
CISSInput capacitanceVGS = 0V, VDS = 30V,
ƒ = 1MHz		37204840pF
COSSOutput capacitance670870pF
CRSSReverse transfer capacitance1216pF
RGSeries gate resistance0.91.8Ω
QgGate charge total (4.5 V)VDS = 30V,
IDS = 30A		2127nC
QgGate charge total (10 V)4356nC
QgdGate charge gate-to-drain7.0nC
QgsGate charge gate-to-source10.1nC
Qg(th)Gate charge at Vth6.3nC
QOSSOutput chargeVDS = 30V, VGS = 0V100nC
td(on)Turnon delay timeVDS = 30V, VGS = 10V,
IDS = 30A, RG = 0Ω		9ns
trRise time20ns
td(off)Turnoff delay time23ns
tfFall time3ns
DIODE CHARACTERISTICS
VSDDiode forward voltageIDS = 30A, VGS = 0V0.81.0V
QrrReverse recovery chargeVDS = 30V, IF = 30A,
di/dt = 300A/µs		172nC
trrReverse recovery time36ns

CSD88599Q5DC
Max RθJA = 50°C/W when mounted on 1in2 (6.45cm2) of 2oz (0.071mm) thick Cu.
CSD88599Q5DC
Max RθJA = 125°C/W when mounted on minimum pad area of 2oz (0.071mm) thick Cu.