SLPS597C April   2017  – April 2018 CSD88599Q5DC

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings (1)
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Brushless DC Motor With Trapezoidal Control
    3. 6.3 Power Loss Curves
    4. 6.4 Safe Operating Area (SOA) Curve
    5. 6.5 Normalized Power Loss Curves
    6. 6.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 6.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Considerations
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

TJ = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 µA 1.4 2.0 2.5 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, IDS = 30 A 2.5 3.3 mΩ
VGS = 10 V, IDS = 30 A 1.7 2.1
gfs Transconductance VDS = 6 V, IDS = 30 A 130 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0V, VDS = 30 V,
ƒ = 1 MHz		 3720 4840 pF
COSS Output capacitance 670 870 pF
CRSS Reverse transfer capacitance 12 16 pF
RG Series gate resistance 0.9 1.8 Ω
Qg Gate charge total (4.5 V) VDS = 30 V,
IDS = 30 A		 21 27 nC
Qg Gate charge total (10 V) 43 56 nC
Qgd Gate charge gate-to-drain 7.0 nC
Qgs Gate charge gate-to-source 10.1 nC
Qg(th) Gate charge at Vth 6.3 nC
QOSS Output charge VDS = 30 V, VGS = 0 V 100 nC
td(on) Turnon delay time VDS = 30 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω		 9 ns
tr Rise time 20 ns
td(off) Turnoff delay time 23 ns
tf Fall time 3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 30 A, VGS = 0 V 0.8 1.0 V
Qrr Reverse recovery charge VDS = 30 V, IF = 30 A,
di/dt = 300 A/µs		 172 nC
trr Reverse recovery time 36 ns

CSD88599Q5DC MaxBoard.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
CSD88599Q5DC MinBoard.gif
Max RθJA = 125°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.