SBAS528D June   2013  – December 2021 DAC7760 , DAC8760

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Electrical Characteristics: AC
    7. 7.7  Timing Requirements: Write Mode
    8. 7.8  Timing Requirements: Readback Mode
    9. 7.9  Timing Diagrams
    10. 7.10 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  DAC Architecture
      2. 8.3.2  Voltage Output Stage
      3. 8.3.3  Current Output Stage
      4. 8.3.4  Internal Reference
      5. 8.3.5  Digital Power Supply
      6. 8.3.6  DAC Clear
      7. 8.3.7  Power-On Reset
      8. 8.3.8  Alarm Detection
      9. 8.3.9  Watchdog Timer
      10. 8.3.10 Frame Error Checking
      11. 8.3.11 User Calibration
      12. 8.3.12 Programmable Slew Rate
    4. 8.4 Device Functional Modes
      1. 8.4.1 Setting Voltage and Current Output Ranges
      2. 8.4.2 Boost Configuration for IOUT
      3. 8.4.3 Filtering the Current Output (only on the VQFN package)
      4. 8.4.4 HART Interface
        1. 8.4.4.1 For 4-mA to 20-mA Mode
        2. 8.4.4.2 For All Current Output Modes
    5. 8.5 Programming
      1. 8.5.1 Serial Peripheral Interface (SPI)
        1. 8.5.1.1 SPI Shift Register
        2. 8.5.1.2 Write Operation
        3. 8.5.1.3 Read Operation
        4. 8.5.1.4 Stand-Alone Operation
        5. 8.5.1.5 Multiple Devices on the Bus
    6. 8.6 Register Maps
      1. 8.6.1 DACx760 Command and Register Map
        1. 8.6.1.1 DACx760 Register Descriptions
          1. 8.6.1.1.1 Control Register
          2. 8.6.1.1.2 Configuration Register
          3. 8.6.1.1.3 DAC Registers
          4. 8.6.1.1.4 Reset Register
          5. 8.6.1.1.5 Status Register
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Controlling the VOUT and IOUT Pins
        1. 9.1.1.1 VOUT and IOUT Pins are Independent Outputs, Never Simultaneously Enabled
        2. 9.1.1.2 VOUT and IOUT Pins are Independent Outputs, Simultaneously Enabled
        3. 9.1.1.3 VOUT and IOUT Pins are Tied Together, Never Simultaneously Enabled
      2. 9.1.2 Implementing HART in All Current Output Modes
        1. 9.1.2.1 Using CAP2 Pin on VQFN Package
        2. 9.1.2.2 Using the ISET-R Pin
      3. 9.1.3 Short-Circuit Current Limiting
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Thermal Considerations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.2 Boost Configuration for IOUT

An external NPN transistor can be used as shown in Figure 8-6 to reduce power dissipation on the die. Most of the load current flows through the NPN transistor with a small amount flowing through the on-chip PMOS transistor based on the gain of the NPN transistor. This reduces the temperature induced drift on the die and internal reference and is an option for use cases at the extreme end of the supply, load current, and ambient temperature ranges. Resistor R2 stabilizes this circuit for cases where the RLOAD is a short or a very small load like a multimeter. Recommended values for R1, R2 and C1 in this circuit are 1 kΩ, 20 Ω and 0.22 µF. An equivalent solution is to place R2 (with a recommended value of 2 kΩ instead of the 20 Ω) in series with the base of the transistor instead of the configuration shown in Figure 8-6. Note that there is some gain error introduced by this configuration as seen in Figure 7-46 for the 0-mA to 24-mA range. TI recommends using the internal transistor in most cases as the values in Section 7.5 are based on the configuration with the internal on-chip PMOS transitor.

GUID-2D6E364D-693E-4CFD-963C-B1E55892CC22-low.gifFigure 8-6 Boost Mode Configuration