SLVSE12A March   2018  – April 2019 DRV8343-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions—DRV8343H
    2.     Pin Functions—DRV8343S
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode (PWM_MODE = 000b or MODE Pin Tied to AGND)
          2. 8.3.1.1.2 3x PWM Mode (PWM_MODE = 001b or MODE Pin = 18 kΩ to AGND)
          3. 8.3.1.1.3 1x PWM Mode (PWM_MODE = 010b or MODE Pin = 75 kΩ to AGND)
          4. 8.3.1.1.4 Independent Half-Bridge PWM Mode (PWM_MODE = 011b or MODE Pin is > 1.5 MΩ to AGND or Hi-Z)
          5. 8.3.1.1.5 Phases A and B are Independent Half-Bridges, Phase C is Independent FET (MODE = 100b)
          6. 8.3.1.1.6 Phases B and C are Independent Half-Bridges, Phase A is Independent FET (MODE = 101b or MODE Pin is 75 kΩ to DVDD)
          7. 8.3.1.1.7 Phases A is Independent Half-Bridge, Phases B and C are Independent FET (MODE = 110b or MODE Pin is 18 kΩ to DVDD)
          8. 8.3.1.1.8 Independent MOSFET Drive Mode (PWM_MODE = 111b or MODE Pin = 0.47 kΩ to DVDD)
        2. 8.3.1.2 Device Interface Modes
          1. 8.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 8.3.1.2.2 Hardware Interface
        3. 8.3.1.3 Gate Driver Voltage Supplies
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Propagation Delay
          4. 8.3.1.4.4 MOSFET VDS Monitors
          5. 8.3.1.4.5 VDRAIN Sense Pin
          6. 8.3.1.4.6 nFAULT Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Low-Side Current Sense Amplifiers
        1. 8.3.4.1 Bidirectional Current Sense Operation
        2. 8.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 8.3.4.3 Amplifier Calibration Modes
        4. 8.3.4.4 MOSFET VDS Sense Mode (SPI Only)
      5. 8.3.5 Gate Driver Protective Circuits
        1. 8.3.5.1  VM Supply Undervoltage Lockout (UVLO)
        2. 8.3.5.2  VCP Charge Pump Undervoltage Lockout (CPUV)
        3. 8.3.5.3  MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 8.3.5.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.5.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 8.3.5.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 8.3.5.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 8.3.5.4  VSENSE Overcurrent Protection (SEN_OCP)
          1. 8.3.5.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.5.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 8.3.5.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 8.3.5.4.4 VSENSE Disabled (OCP_MODE = 11b)
        5. 8.3.5.5  Gate Driver Fault (GDF)
        6. 8.3.5.6  Thermal Warning (OTW)
        7. 8.3.5.7  Thermal Shutdown (OTSD)
          1. 8.3.5.7.1 Latched Shutdown (OTSD_MODE = 0b)
          2. 8.3.5.7.2 Automatic Recovery (OTSD_MODE = 1b)
        8. 8.3.5.8  Open Load Detection (OLD)
          1. 8.3.5.8.1 Open Load Detection in Passive Mode (OLP)
            1. 8.3.5.8.1.1 OLP Steps
          2. 8.3.5.8.2 Open Load Detection in Active Mode (OLA)
        9. 8.3.5.9  Offline Shorts Diagnostics
          1. 8.3.5.9.1 Offline Short-to-Supply Diagnostic (SHT_BAT)
          2. 8.3.5.9.2 Offline Short-to-Ground Diagnostic (SHT_GND)
        10. 8.3.5.10 Reverse Supply Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
          1. 8.5.1.1.1 SPI Format
    6. 8.6 Register Maps
      1. 8.6.1 Status Registers
        1. 8.6.1.1 FAULT Status Register (Address = 0x00) [reset = 0x00]
          1. Table 16. FAULT Status Register Field Descriptions
        2. 8.6.1.2 DIAG Status A Register (Address = 0x01) [reset = 0x00]
          1. Table 17. DIAG Status A Register Field Descriptions
        3. 8.6.1.3 DIAG Status B Register (Address = 0x02) [reset = 0x00]
          1. Table 18. DIAG Status B Register Field Descriptions
        4. 8.6.1.4 DIAG Status C Register (address = 0x03) [reset = 0x00]
          1. Table 19. DIAG Status C Register Field Descriptions
      2. 8.6.2 Control Registers
        1. 8.6.2.1  IC1 Control Register (Address = 0x04) [reset = 0x00]
          1. Table 21. IC1 Control Field Descriptions
        2. 8.6.2.2  IC2 Control Register (address = 0x05) [reset = 0x40]
          1. Table 22. IC2 Control Field Descriptions
        3. 8.6.2.3  IC3 Control Register (Address = 0x06) [reset = 0xFF]
          1. Table 23. IC3 Control Field Descriptions
        4. 8.6.2.4  IC4 Control Register (Address = 0x07) [reset = 0xFF]
          1. Table 24. IC4 Control Field Descriptions
        5. 8.6.2.5  IC5 Control Register (Address = 0x08) [reset = 0xFF]
          1. Table 25. IC5 Control Field Descriptions
        6. 8.6.2.6  IC6 Control Register (Address = 0x09) [reset = 0x99]
          1. Table 26. IC6 Control Field Descriptions
        7. 8.6.2.7  IC7 Control Register (Address = 0x0A) [reset = 0x99]
          1. Table 27. IC7 Control Field Descriptions
        8. 8.6.2.8  IC8 Control Register (Address = 0x0B) [reset = 0x99]
          1. Table 28. IC8 Control Field Descriptions
        9. 8.6.2.9  IC9 Control Register (Address = 0x0C) [reset = 0x2F]
          1. Table 29. IC9 Control Field Descriptions
        10. 8.6.2.10 IC10 Control Register (Address = 0x0D) [reset = 0x61]
          1. Table 30. IC10 Control Field Descriptions
        11. 8.6.2.11 IC11 Control Register (Address = 0x0E) [reset = 0x00]
          1. Table 31. IC11 Control Field Descriptions
        12. 8.6.2.12 IC12 Control Register (Address = 0x0F) [reset = 0x2A]
          1. Table 32. IC12 Control Field Descriptions
        13. 8.6.2.13 IC13 Control Register (Address = 0x10) [reset = 0x7F]
          1. Table 33. IC13 Control Field Descriptions
        14. 8.6.2.14 IC14 Control Register (Address = 0x10) [reset = 0x00]
          1. Table 34. IC14 Control Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 Example
          4. 9.2.1.2.4 Sense Amplifier Bidirectional Configuration
            1. 9.2.1.2.4.1 Example
          5. 9.2.1.2.5 External Components
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Application With One Sense Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Sense Amplifier Unidirectional Configuration
            1. 9.2.2.2.1.1 Example
            2. 9.2.2.2.1.2 Unused pins
          2. 9.2.2.2.2 External Components
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Consideration in Generator Mode
    2. 10.2 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control

The TDRIVE component is an integrated gate drive state machine that provides automatic dead time insertion through handshaking between the high-side and low-side gate drivers, parasitic dV/dt gate turnon prevention, and MOSFET gate fault detection.

The first component of the TDRIVE state machine is automatic dead time insertion. Dead time is period of time between the switching of the external high-side and low-side MOSFETs to make sure that they do not cross conduct and cause shoot-through. The DRV8343-Q1 device uses VGS voltage monitors to measure the MOSFET gate-to-source voltage and determine the correct time to switch instead of relying on a fixed time value. This feature lets the dead time of the gate driver adjust for variation in the system such as temperature drift and variation in the MOSFET parameters. An additional digital dead time (tDEAD) can be inserted and is adjustable through the registers on SPI devices.

The second component of the TDRIVE state machine is parasitic dV/dt gate turnon prevention. To implement this component, the TDRIVE state machine enables a strong pulldown current (ISTRONG) on the opposite MOSFET gate whenever a MOSFET is switching. The strong pulldown occurs for the TDRIVE duration. This feature helps remove parasitic charge that couples into the MOSFET gate when the voltage half-bridge switch node slews rapidly.

The third component implements a gate-fault detection scheme to detect pin-to-pin solder defects, a MOSFET gate failure, or a MOSFET gate stuck-high or stuck-low voltage condition. This implementation is done with a pair of VGS gate-to-source voltage monitors for each half-bridge gate driver. When the gate driver receives a command to change the state of the half-bridge it starts to monitor the gate voltage of the external MOSFET. If, at the end of the tDRIVE period, the VGS voltage has not increased the correct threshold, the gate driver reports a fault. To make sure that a false gate drive fault (GDF) is not detected, a tDRIVE time should be selected that is longer than the time required to charge or discharge the MOSFET gate. The tDRIVE time does not increase the PWM time and will terminate if another PWM command is received while active. In the SPI device, for IDRIVE bit settings of 0000b, 0001b, 0010b, and 0011b, a longer tDRIVE time of 20-µs is automatically selected by the TDRIVE_MAX bit. If the 20-µs tDRVIE time is not required, write a 0 to the TDRIVE_MAX bit to disable it and set the tDRIVE time by the TDRIVE bits. For all other IDRIVE settings, writing to the TDRIVE_MAX bit is disabled. This option is not available in the H/W device.

For additional details on the TDRIVE settings, see the Register Maps section for SPI devices and the Pin Diagrams section for hardware interface devices. Figure 21 shows an example of the TDRIVE state machine in operation.

DRV8343-Q1 drv835x-idrive-tdrive.gifFigure 21. TDRIVE State Machine