In the case of a MOSFET VDS or VSENSE overcurrent fault the driver uses a special shutdown sequence to protect the driver and MOSFETs from large voltage switching transients. These large voltage transients can be created when rapidly switching off the external MOSFETs when a large drain to source current is present, such as during an overcurrent event.
To mitigate this issue, the DRV835x family of devices reduce the IDRIVEN pull down current setting for both the high-side and low-side gate drivers during the MOSFET turn off in response to the fault event. If the programmed IDRIVEN value is less than 1100 mA, the IDRIVEN value is set to the minimum IDRIVEN setting. If the programmed IDRIVEN value is greater than or equal to 1100mA, the IDRIVEN value is reduced by seven code settings.