SLVSGI9A october 2022 – july 2023 DRV8411A
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
Power dissipation in the device is dominated by the DC power dissipated in the output FET resistance, or RDS(ON). There is additional power dissipated due to PWM switching losses, which are dependent on PWM frequency, rise and fall times, and VM supply voltages.
The DC power dissipation of one H-bridge can be roughly estimated by Equation 7.
where
RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken into consideration when estimating the maximum output current.