SLOSE49 November   2020 DRV8434E

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
      1. 6.5.1 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Bridge Control
      2. 7.3.2 Current Regulation
      3. 7.3.3 Decay Modes
        1. 7.3.3.1 Mixed Decay
        2. 7.3.3.2 Fast Decay
        3. 7.3.3.3 Smart tune Dynamic Decay
        4. 7.3.3.4 Smart tune Ripple Control
        5. 7.3.3.5 Blanking time
      4. 7.3.4 Charge Pump
      5. 7.3.5 Linear Voltage Regulators
      6. 7.3.6 Logic and Quad-Level Pin Diagrams
        1. 7.3.6.1 nFAULT Pin
      7. 7.3.7 Protection Circuits
        1. 7.3.7.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.7.2 VCP Undervoltage Lockout (CPUV)
        3. 7.3.7.3 Overcurrent Protection (OCP)
        4. 7.3.7.4 Thermal Shutdown (OTSD)
        5.       Fault Condition Summary
    4. 7.4 Device Functional Modes
      1. 7.4.1 Sleep Mode (nSLEEP = 0)
      2. 7.4.2 Operating Mode (nSLEEP = 1)
      3. 7.4.3 nSLEEP Reset Pulse
      4.      Functional Modes Summary
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Current Regulation
        2. 8.2.2.2 Power Dissipation and Thermal Calculation
      3. 8.2.3 Application Curves
    3. 8.3 Alternate Application
      1. 8.3.1 Design Requirements
      2. 8.3.2 Detailed Design Procedure
        1. 8.3.2.1 Current Regulation
        2. 8.3.2.2 Stepper Motor Speed
        3. 8.3.2.3 Decay Modes
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Typical values are at TA = 25°C and VVM = 24 V. All limits are over recommended operating conditions, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VM, DVDD)
IVM VM operating supply current nSLEEP = 1, No motor load 5 6.5 mA
IVMQ VM sleep mode supply current nSLEEP = 0 2 4 μA
tSLEEP Sleep time nSLEEP = 0 to sleep-mode

120

 μs
tRESET nSLEEP reset pulse nSLEEP low to clear fault

20

40

 μs
tWAKE Wake-up time nSLEEP = 1 to output transition 0.8 1.2 ms
tON Turn-on time VM > UVLO to output transition 0.8 1.2 ms
VDVDD Internal regulator voltage No external load, 6 V < VVM < 48 V 4.75 5 5.25 V
No external load, VVM = 4.5 V

4.2

4.35

V
CHARGE PUMP (VCP, CPH, CPL)
VVCP VCP operating voltage 6 V < VVM < 48 V VVM + 5 V
f(VCP) Charge pump switching frequency VVM > UVLO; nSLEEP = 1 360 kHz
LOGIC-LEVEL INPUTS (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP)
VIL Input logic-low voltage 0 0.6 V
VIH Input logic-high voltage 1.5 5.5 V
VHYS Input logic hysteresis 150 mV
IIL Input logic-low current VIN = 0 V –1 1 μA
IIH Input logic-high current VIN = 5 V 100 μA
tPD Propagation delay xPH, xEN, xINx input to current change 800 ns
QUAD-LEVEL INPUTS (ADECAY, BDECAY, TOFF)
VI1 Input logic-low voltage Tied to GND 0 0.6 V
VI2 330kΩ ± 5% to GND 1 1.25 1.4 V
VI3 Input Hi-Z voltage Hi-Z (>500kΩ to GND) 1.8 2 2.2 V
VI4 Input logic-high voltage Tied to DVDD 2.7 5.5 V
IO Output pull-up current 10 μA
CONTROL OUTPUTS (nFAULT)
VOL Output logic-low voltage IO = 5 mA 0.5 V
IOH Output logic-high leakage –1 1 μA
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2)
RDS(ONH) High-side FET on resistance TJ = 25 °C, IO = -1 A 165 200 mΩ
TJ = 125 °C, IO = -1 A 250 300 mΩ
TJ = 150 °C, IO = -1 A 280 350 mΩ
RDS(ONL) Low-side FET on resistance TJ = 25 °C, IO = 1 A 165 200 mΩ
TJ = 125 °C, IO = 1 A 250 300 mΩ
TJ = 150 °C, IO = 1 A 280 350 mΩ
tSR Output slew rate VM = 24V, IO = 1 A, Between 10% and 90% 240 V/µs
PWM CURRENT CONTROL (VREFA, VREFB)
KV Transimpedance gain VREF = 3.3 V 1.254 1.32 1.386 V/A
IVREF VREF Leakage Current VREF = 3.3 V

8.25

 μA
tOFF PWM off-time TOFF = 0 7 μs
TOFF = 1 16
TOFF = Hi-Z 24
TOFF = 330 kΩ to GND 32
ΔITRIP Current trip accuracy 0.25 A < IO < 0.5 A –12 12 %
0.5 A < IO < 1 A –6

6
1 A < IO < 2.5 A -4

4
IO,CH AOUT and BOUT current matching IO = 2.5 A –2.5 2.5 %
PROTECTION CIRCUITS
VUVLO VM UVLO lockout VM falling, UVLO falling 4.1 4.25 4.35 V
VM rising, UVLO rising 4.2 4.35 4.45
VUVLO,HYS Undervoltage hysteresis Rising to falling threshold 100 mV
VCPUV Charge pump undervoltage VCP falling VVM + 2 V
IOCP Overcurrent protection Current through any FET 4 A
tOCP Overcurrent deglitch time 2 μs
TOTSD Thermal shutdown Die temperature TJ 150 165 180 °C
THYS_OTSD Thermal shutdown hysteresis Die temperature TJ 20 °C