SLVSAW5D July 2011 – December 2024 DRV8803
PRODUCTION DATA
The current path starts from the supply VM, and moves through the inductive winding load, and low-side sinking NMOS power FET. Power dissipation losses in one sink NMOS power FET are shown in Equation 2.
The DRV8803 device has been measured to be capable of 1.5A Single Channel or 800-mA Four Channels with the DW package, 2A Single Channel or 1A Four Channels with the PWP, and 1.9A Single Channel or 0.9A Four Channels with the DYZ package at 25°C on standard FR-4 PCBs. The maximum RMS current varies based on PCB design and the ambient temperature.