SLVSAW4G July   2011  – December 2024 DRV8804

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison
  6. Pin Configuration and Functions
    1. 5.1 Pin Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Electrical Characteristics
    5. 6.5 Thermal Information
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Drivers
      2. 7.3.2 Serial Interface Operation
        1.       Daisy Chain Operation
      3. 7.3.3 nENBL and RESET Operation
      4. 7.3.4 Protection Circuits
        1. 7.3.4.1 Overcurrent Protection (OCP)
        2. 7.3.4.2 Thermal Shutdown (TSD)
        3. 7.3.4.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Drive Current
      3. 8.2.3 Application Curves
    3.     Power Supply Recommendations
      1. 8.3.1 Bulk Capacitance
    4. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
      3. 8.3.3 Thermal Considerations
        1. 8.3.3.1 Power Dissipation
        2. 8.3.3.2 Heatsinking
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Community Resources
    3. 9.3 Trademarks
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

TA = 25°C, over recommended operating conditions (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SUPPLIES
IVMVM operating supply currentVM = 24 V1.62.1mA
VUVLOVM undervoltage lockout voltageVM rising8.2V
LOGIC-LEVEL INPUTS (SCHMITT TRIGGER INPUTS WITH HYSTERESIS)
VILInput low voltage0.60.7V
VIHInput high voltage2V
VHYSInput hysteresis0.45V
IILInput low currentVIN = 0–2020μA
IIHInput high currentVIN = 3.3 V100μA
RPDPulldown resistance100
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOLOutput low voltageIO = 5 mA0.5V
IOHOutput high leakage currentVO = 3.3 V1μA
SDATOUT OUTPUT (PUSH-PULL OUTPUT)
VOLOutput low voltageIO = 5 mA0.5V
VOHOutput high voltageIO = 100 µA, VM = 11 V - 60 V, peak6.5V
IO = 100 µA, VM = 11 V - 60 V, steady state3.34.55.6
IO = 100 µA, VM = 8.2 V - 11 V, steady state2.5
ISRCOutput source currentVM = 24 V1mA
ISNKOutput sink currentVM = 24 V5mA
LOW-SIDE FETS
RDS(ON)FET on resistance

, HTSSOP and SOIC package

VM = 24 V, IO = 700 mA, TJ = 25°C0.5
VM = 24 V, IO = 700 mA, TJ = 85°C0.750.8

FET on resistance, SOT-23-THN package

VM = 24 V, IO = 700 mA, TJ = 25°C

0.4

VM = 24 V, IO = 700 mA, TJ = 85°C

0.64

IOFFOff-state leakage current–5050μA
HIGH-SIDE DIODES
VFDiode forward voltageVM = 24 V, IO = 700 mA, TJ = 25°C1.2V
IOFFOff-state leakage currentVM = 24 V, TJ = 25°C–5050μA
OUTPUTS
tRRise timeVM = 24 V, IO = 700 mA, Resistive load50300ns
tFFall timeVM = 24 V, IO = 700 mA, Resistive load50300ns
PROTECTION CIRCUITS
IOCPOvercurrent protection trip level2.33.8A
tOCPOvercurrent protection deglitch time3.5µs
tRETRYOvercurrent protection retry time1.2ms
tTSDThermal shutdown temperatureDie temperature(1)150160180°C
Not production tested.