SLVSH10C November   2022  – December 2022 ESD751 , ESD761

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics – ESD751
    8. 6.8 Typical Characteristics - ESD761
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-5 Surge Protection
      2. 7.3.2 I/O Capacitance
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS DEVICE MIN TYP MAX UNIT
VRWM Reverse stand-off voltage –24 24 V
VBRF Breakdown voltage(2) IIO = 10 mA, IO to GND 25.5 35.5 V
VBRR IIO = –10 mA, IO to GND –35.5 –25.5
VCLAMP Clamping voltage(3) IPP = 2.8 A, tp = 8/20 µs, IO to GND and GND to IO ESD751 36.5 V
IPP = 1.8 A, tp = 8/20 µs, IO to GND and GND to IO ESD761 36.3
Clamping voltage(4) IPP = 16 A, TLP, IO to GND and GND to IO ESD751 41.5 V
ESD761 42.5
ILEAK Leakage current VIO = ±24 V, IO to GND -50 1 50 nA
RDYN Dynamic resistance(4) ESD751 0.6 Ω
ESD761 0.53
CL Line capacitance VIO = 0 V, f = 1 MHz, Vpp = 30 mV, IO to GND ESD751 1.6 2.7 pF
ESD761 1.1 1.8
(1) VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction, before the device latches into the snapback state.
(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
(3) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008