SLVSEG9B May   2018  – September 2018 ESDS312 , ESDS314

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Typical Application Schematic
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions for ESDS312
    2.     Pin Functions for ESDS314
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings -JEDEC Specifications
    3. 6.3 ESD Ratings - IEC Specifications
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-4 EFT Protection
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

IEC 61000-4-4 EFT Protection

The I/O pins of ESDS314 and ESDS312 can withstand surge events (IEC 61000-4-5, 8/20 µs waveform) up to 25 A and 170 W. These devices also provide ESD protection up to ±30-kV contact and ±30-kV air gap per IEC 61000-4-2 standard. The I/O pins can withstand an electrical fast transient burst of up to 80 A (IEC 61000-4-4 5/50 ns waveform, 4 kV with 50-Ω impedance). The capacitance between each I/O pin to ground is 4.5 pF (typical) and 5.5 pF (maximum). This device supports data rates up to 1 Gbps.

The reverse DC breakdown voltage of each I/O pin is a minimum of 4.5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 3.6 V. The I/O pins feature an ultra-low leakage current of 100 nA (maximum) with a bias of 3.6 V. This device features an industrial operating range of –40°C to +125°C.