SBOS511B April   2015  – December 2015

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Amplifier Operation
      2. 7.4.2 Input Filtering
        1. 7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
      3. 7.4.3 Shutting Down the Device
      4. 7.4.4 Using the Device with Common-Mode Transients Above 36 V
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Current Summing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Parallel Multiple INA250 Devices for Higher Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Current Differencing
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage (VS) 40 V
Analog input current Continuous current ±15 A
Analog inputs (IN+, IN–) Common-mode GND – 0.3 40 V
Analog inputs (VIN+, VIN–) Common-mode GND – 0.3 40 V
Differential (VIN+) – (VIN–) –40 40
Analog inputs (REF) GND – 0.3 VS + 0.3 V
Analog outputs (SH+, SH–) Common-mode GND – 0.3 40 V
Analog outputs (OUT) GND – 0.3 (VS + 0.3) up to 18 V
Temperature Operating, TA –55 150 °C
Junction, TJ 150
Storage, Tstg –65 150
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VCM Common-mode input voltage 0 36 V
VS Operating supply voltage 2.7 36 V
TA Operating free-air temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) INA250 UNIT
PW (TSSOP)
16 PINS
RθJA Junction-to-ambient thermal resistance 104.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42.3 °C/W
RθJB Junction-to-board thermal resistance 48.5 °C/W
ψJT Junction-to-top characterization parameter 4.5 °C/W
ψJB Junction-to-board characterization parameter 48 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range –0.1 36 V
CMR Common-mode rejection INA250A1, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 94 102 dB
INA250A2, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 97 110
INA250A3, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 106 114
INA250A4, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 108 118
IOS Offset current, RTI(1) INA250A1, ISENSE = 0 A ±15 ±100 mA
INA250A2, ISENSE = 0 A ±12.5 ±50
INA250A3, ISENSE = 0 A ±5 ±30
INA250A4, ISENSE = 0 A ±5 ±20
dIOS/dT RTI versus temperature TA = –40°C to 125°C 25 250 μA/°C
PSR VS = 2.7 V to 36 V, TA = –40°C to 125°C ±0.03 ±1 mA/V
IB Input bias current IB+, IB-, ISENSE = 0 A ±28 ±35 μA
VREF Reference input range(3) 0 (VS) up to 18 V
SHUNT RESISTOR(5)
RSHUNT Shunt resistance
(SH+ to SH–)		 Equivalent resistance when used with onboard amplifier 1.998 2 2.002 mΩ
Used as stand-alone resistor(7) 1.9 2 2.1
Package resistance IN+ to IN– 4.5 mΩ
Resistor temperature coefficient TA = –40°C to 125°C 15 ppm/°C
TA = –40°C to 0°C 50
TA = 0°C to 125°C 10
ISENSE Maximum continuous current(4) TA = –40°C to 85°C ±15 A
Shunt short time overload ISENSE = 30 A for 5 seconds ±0.05%
Shunt thermal shock –65°C to 150°C, 500 cycles ±0.1%
Shunt resistance to solder heat 260°C solder, 10 s ±0.1%
Shunt high temperature exposure 1000 hours, TA = 150°C ±0.15%
Shunt cold temperature storage 24 hours, TA = –65°C ±0.025%
OUTPUT
G Gain INA250A1 200 mV/A
INA250A2 500
INA250A3 800
INA250A4 2 V/A
System gain error(6) ISENSE = –10 A to 10 A, TA = 25°C ±0.05% ±0.3%
ISENSE = –10 A to 10 A,
TA = –40°C to 125°C		 ±0.75%
TA = –40°C to 125°C 45 ppm/°C
Nonlinearity error ISENSE = 0.5 A to 10 A ±0.03%
RO Output impedance 1.5 Ω
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT(2)
Swing to VS power-supply rail RL = 10 kΩ to GND (VS) – 0.1 (VS) – 0.2 V
Swing to GND RL = 10 kΩ to GND (VGND) + 25 (VGND) + 50 mV
FREQUENCY RESPONSE
BW Bandwidth INA250A1, CL = 10 pF 50 kHz
INA250A2, CL = 10 pF 50
INA250A3, CL = 10 pF 35
INA250A4, CL = 10 pF 11
SR Slew rate CL = 10 pF 0.2 V/μs
NOISE, RTI(1)
Voltage noise density INA250A1 51 nV/√Hz
INA250A2 35
INA250A3 37
INA250A4 27
POWER SUPPLY
VS Operating voltage range 2.7 36 V
IQ Quiescent current TA = –40°C to 125°C 200 300 μA
TEMPERATURE RANGE
Specified range –40 125 °C
(1) RTI = referred-to-input.
(2) See Typical Characteristics curve, Output Voltage Swing vs Output Current (Figure 19).
(3) The supply voltage range maximum is 36 V, but the reference voltage cannot be higher than 18 V.
(4) See Figure 30 and the Layout section for additional information on the current derating and layout recommendations to improve the current handling capability of the device at higher temperatures.
(5) See the Integrated Shunt Resistor section for additional information regarding the integrated current-sensing resistor.
(6) System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical Characteristics table.
(7) The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistor section for more information.

6.6 Typical Characteristics

At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
INA250A1 INA250A2 INA250A3 INA250A4 D027_SBOS511A.gif
Figure 1. INA250A1 Input Offset Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D028_SBOS511A.gif
Figure 3. INA250A3 Input Offset Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D002_SBOS511A.gif
Figure 5. Input Offset vs Temperature
INA250A1 INA250A2 INA250A3 INA250A4 C003_SBOS511.png
Figure 7. INA250A2 Common-Mode Rejection Ratio Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D026_SBOS511A.gif
Figure 9. INA250A4 Common-Mode Rejection Ratio Distribution
INA250A1 INA250A2 INA250A3 INA250A4 C005_SBOS511.png
Figure 11. Power-Supply Rejection Ratio Distribution
INA250A1 INA250A2 INA250A3 INA250A4 C033_SBOS511.png
Figure 13. System Gain Error vs Temperature
INA250A1 INA250A2 INA250A3 INA250A4 C008_SBOS511.png
Figure 15. Amplifier Gain Error vs Temperature
INA250A1 INA250A2 INA250A3 INA250A4 C010_SBOS511.png
VCM = 12 V, VREF = 2.5 V, ISENSE = 0 A,
VS = 5 V + 250-mV sine disturbance
Figure 17. Power-Supply Rejection vs Frequency
INA250A1 INA250A2 INA250A3 INA250A4 C012_SBOS511.gif
Figure 19. Output Voltage Swing vs Output Current
INA250A1 INA250A2 INA250A3 INA250A4 C014_SBOS511.png
ISENSE = 0 A, VS = 0 V, VREF = 0 V
Figure 21. Input Bias Current vs Common-Mode Voltage
(VS = 0 V)
INA250A1 INA250A2 INA250A3 INA250A4 C016_SBOS511.png
VREF = VS / 2
Figure 23. Quiescent Current vs Temperature
INA250A1 INA250A2 INA250A3 INA250A4 D019_SBOS511A.gif
VS = 5 V, VREF = 2.5 V, ISENSE = 0 A
Figure 25. Input-Referred Voltage Noise vs Frequency
INA250A1 INA250A2 INA250A3 INA250A4 D021_SBOS511A.gif
Input = (VIN+) - (VIN-)
Figure 27. Step Response
INA250A1 INA250A2 INA250A3 INA250A4 C024_SBOS511.png
Figure 29. Start-Up Response
INA250A1 INA250A2 INA250A3 INA250A4 C001_SBOS511.png
Figure 2. INA250A2 Input Offset Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D029_SBOS511A.gif
Figure 4. INA250A4 Input Offset Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D024_SBOS511A.gif
Figure 6. INA250A1 Common-Mode Rejection Ratio Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D025_SBOS511A.gif
Figure 8. INA250A3 Common-Mode Rejection Ratio Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D004_SBOS511A.gif
Figure 10. Common-Mode Rejection Ratio vs Temperature
INA250A1 INA250A2 INA250A3 INA250A4 C006_SBOS511.png
Figure 12. Power-Supply Rejection Ratio vs Temperature
INA250A1 INA250A2 INA250A3 INA250A4 C007_SBOS511.png
System gain error = RSHUNT error + amplifier gain error,
load current = 10 A
Figure 14. System Gain Error Distribution
INA250A1 INA250A2 INA250A3 INA250A4 D010_SBOS511A.gif
VCM = 12 V, ISENSE = 500 mAPP
Figure 16. Amplifier Gain vs Frequency
INA250A1 INA250A2 INA250A3 INA250A4 C011_SBOS511.png
VS = 5 V, VREF = 2.5 V, ISENSE = 0 A, VCM = 1-V sine wave
Figure 18. Common-Mode Rejection vs Frequency
INA250A1 INA250A2 INA250A3 INA250A4 C013_SBOS511.png
ISENSE = 0 A, VS = 5 V
Figure 20. Input Bias Current vs Common-Mode Voltage
(VS = 5 V)
INA250A1 INA250A2 INA250A3 INA250A4 C015_SBOS511.png
ISENSE = 0 A, VS = 5 V
Figure 22. Input Bias Current vs Temperature
INA250A1 INA250A2 INA250A3 INA250A4 C017_SBOS511.png
VREF = 2.5 V
Figure 24. Quiescent Current vs Supply Voltage
INA250A1 INA250A2 INA250A3 INA250A4 C019_SBOS511.png
VS = 5 V, VCM = 0 V, ISENSE = 0 A
Figure 26. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input)
INA250A1 INA250A2 INA250A3 INA250A4 C021_SBOS511.png
Input = VIN+, VREF = 2.5 V
Figure 28. Common-Mode Transient Response