SBOS741G April   2017  – April 2020 INA180 , INA2180 , INA4180

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Typical Application Circuit
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions: INA180 (Single Channel)
    2.     Pin Functions: INA2180 (Dual Channel) and INA4180 (Quad Channel)
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 High Bandwidth and Slew Rate
      2. 8.3.2 Wide Input Common-Mode Voltage Range
      3. 8.3.3 Precise Low-Side Current Sensing
      4. 8.3.4 Rail-to-Rail Output Swing
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Mode
      2. 8.4.2 Input Differential Overload
      3. 8.4.3 Shutdown Mode
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 RSENSE and Device Gain Selection
      3. 9.1.3 Signal Filtering
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 Common-Mode Transients Greater Than 26 V
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VSENSE = VIN+ – VIN–  (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
CMRR Common-mode rejection ratio, RTI (1) VIN+ = 0 V to 26 V, VSENSE = 10 mV,
TA = –40°C to +125°C
84 100 dB
VOS Offset voltage(2), RTI VIN+ = 0 V ±25 ±150 μV
±100 ±500 μV
dVOS/dT Offset drift, RTI TA = –40°C to +125°C 0.2 1 μV/°C
PSRR Power supply rejection ratio, RTI VS = 2.7 V to 5.5 V, VSENSE = 10 mV ±8 ±40 μV/V
IIB Input bias current VSENSE = 0 mV, VIN+ = 0 V 0.1 μA
VSENSE = 0 mV 80
IIO Input offset current VSENSE = 0 mV ±0.05 μA
OUTPUT
G Gain
A1 devices

20 V/V
A2 devices 50
A3 devices 100
A4 devices 200
EG Gain error VOUT = 0.5 V to VS – 0.5 V,
TA = –40°C to +125°C
±0.1% ±1%
Gain error vs temperature TA = –40°C to +125°C 1.5 20 ppm/°C
Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.01%
Maximum capacitive load  No sustained oscillation 1 nF
VOLTAGE OUTPUT(3)
VSP Swing to VS power-supply rail (4) RL = 10 kΩ to GND, TA = –40°C to +125°C (VS) – 0.02 (VS) – 0.03 V
VSN Swing to GND (4) RL = 10 kΩ to GND, TA = –40°C to +125°C (VGND) + 0.0005 (VGND) + 0.005 V
FREQUENCY RESPONSE
BW Bandwidth A1 devices, CLOAD = 10 pF 350 kHz
A2 devices, CLOAD = 10 pF 210 kHz
A3 devices, CLOAD = 10 pF 150 kHz
A4 devices, CLOAD = 10 pF 105 kHz
SR Slew rate 2 V/μs
NOISE, RTI
Voltage noise density 40 nV/√Hz
POWER SUPPLY
IQ Quiescent current INA180 VSENSE = 10 mV 197 260 μA
VSENSE = 10 mV, TA = –40°C to +125°C 300 μA
INA2180 VSENSE = 10 mV 355 500 μA
VSENSE = 10 mV, TA = –40°C to +125°C 520 μA
INA4180 VSENSE = 10 mV 690 900 μA
VSENSE = 10 mV, TA = –40°C to +125°C 1000 μA
RTI = referred-to-input.
Offset voltage is obtained by linear extrapolation to VSENSE = 0 V with VSENSE = 10% to 90% of full-scale-range.
See Figure 19.
Swing specifications are tested with an overdriven input condition.