SLLSEY2G March   2017  – August 2021 ISOW7840 , ISOW7841 , ISOW7842 , ISOW7843 , ISOW7844

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics—5-V Input, 5-V Output
    10. 7.10 Supply Current Characteristics—5-V Input, 5-V Output
    11. 7.11 Electrical Characteristics—3.3-V Input, 5-V Output
    12. 7.12 Supply Current Characteristics—3.3-V Input, 5-V Output
    13. 7.13 Electrical Characteristics—5-V Input, 3.3-V Output
    14. 7.14 Supply Current Characteristics—5-V Input, 3.3-V Output
    15. 7.15 Electrical Characteristics—3.3-V Input, 3.3-V Output
    16. 7.16 Supply Current Characteristics—3.3-V Input, 3.3-V Output
    17. 7.17 Switching Characteristics—5-V Input, 5-V Output
    18. 7.18 Switching Characteristics—3.3-V Input, 5-V Output
    19. 7.19 Switching Characteristics—5-V Input, 3.3-V Output
    20. 7.20 Switching Characteristics—3.3-V Input, 3.3-V Output
    21. 7.21 Insulation Characteristics Curves
    22. 7.22 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Electromagnetic Compatibility (EMC) Considerations
      2. 9.3.2 Power-Up and Power-Down Behavior
      3. 9.3.3 Current Limit, Thermal Overload Protection
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device I/O Schematics
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
        1. 10.2.3.1 Insulation Lifetime
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 PCB Material
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Related Links
    4. 13.4 Receiving Notification of Documentation Updates
    5. 13.5 Support Resources
    6. 13.6 Trademarks
    7. 13.7 Electrostatic Discharge Caution
    8. 13.8 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Description (continued)

The ISOW784x family of devices provides high electromagnetic immunity and low emissions while isolating CMOS or LVCMOS digital I/Os. The signal-isolation channel has a logic input and output buffer separated by a double capacitive silicon dioxide (SiO2) insulation barrier, whereas, power isolation uses on-chip transformers separated by thin film polymer as insulating material. Various configurations of forward and reverse channels are available. If the input signal is lost, the default output is high for the ISOW784x devices without the F suffix and low for the devices with the F suffix (see VSI and VSO can be either VCC or VISO depending on the channel direction).

These devices help prevent noise currents on data buses, such as RS-485, RS-232, and CAN, or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. Through innovative chip design and layout techniques, electromagnetic compatibility of the device has been significantly enhanced to ease system-level ESD, EFT, surge and emissions compliance. The high-efficiency of the power converter allows operation at a higher ambient temperature. The device is available in a 16-pin SOIC wide-body (SOIC-WB) DWE package.