SNOSBT3J January   2000  – March 2022 LM158-N , LM258-N , LM2904-N , LM358-N

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: LM158A, LM358A, LM158, LM258
    6. 6.6 Electrical Characteristics: LM358, LM2904
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Noninverting DC Gain
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 System Examples
        1. 8.2.2.1 Typical Single-Supply Applications
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.1 Absolute Maximum Ratings

See (1)(2)(3).
LM158, LM258, LM358, LM158A, LM258A, LM358ALM2904UNIT
MINMAXMINMAX
Supply Voltage, V+3226V
Differential Input Voltage3226V
Input Voltage−0.332−0.326V
Power Dissipation(4)      PDIP (P)830830mW
TO-99 (LMC)550mW
SOIC (D)530530mW
DSBGA (YPB)435mW
Output Short-Circuit to GND  (One Amplifier)(5)V+ ≤ 15 V and TA = 25°CContinuousContinuous
Input Current (VIN < −0.3V)(6)5050mA
Temperature−55125°C
PDIP Package (P): Soldering (10 seconds)260260°C
SOIC Package (D)Vapor Phase (60 seconds)215215°C
Infrared (15 seconds)220220°C
Lead TemperaturePDIP (P): (Soldering, 10 seconds)260260°C
TO-99 (LMC): (Soldering, 10 seconds)300300°C
Storage temperature, Tstg−65150−65150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(4) For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a 125°C maximum junction temperature and a thermal resistance of 120°C/W for PDIP, 182°C/W for TO-99, 189°C/W for SOIC package, and 230°C/W for DSBGA, which applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can be derated based on a +150°C maximum junction temperature. The dissipation is the total of both amplifiers—use external resistors, where possible, to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.
(5) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15 V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
(6) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3 V (at 25°C).