SNVSBZ3 June   2021 LM5168-Q1

ADVANCE INFORMATION  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Control Architecture
      2. 8.3.2  Internal VCC Regulator and Bootstrap Capacitor
      3. 8.3.3  Internal Soft Start
      4. 8.3.4  On-Time Generator
      5. 8.3.5  Current Limit
      6. 8.3.6  N-Channel Buck Switch and Driver
      7. 8.3.7  Synchronous Rectifier
      8. 8.3.8  Enable/Undervoltage Lockout (EN/UVLO)
      9. 8.3.9  Power Good (PGOOD)
      10. 8.3.10 Thermal Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Active Mode
      3. 8.4.3 Sleep Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Switching Frequency (RT)
        2. 9.2.2.2  Transformer Selection
        3. 9.2.2.3  Output Capacitor Selection
        4. 9.2.2.4  Secondary Output Diode
        5. 9.2.2.5  Regulation Comparator
        6. 9.2.2.6  Input Capacitor
        7. 9.2.2.7  Type-3 Ripple Network
        8. 9.2.2.8  Minimum Secondary Output Load
        9. 9.2.2.9  Example Design Summary
        10. 9.2.2.10 Thermal Considerations
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Compact PCB Layout for EMI Reduction
      2. 11.1.2 Feedback Resistors
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Compact PCB Layout for EMI Reduction

Radiated EMI generated by high di/dt components relates to pulsing currents in switching converters. The larger the area covered by the path of a pulsing current, the more electromagnetic emission is generated. The key to minimizing radiated EMI is to identify the pulsing current path and minimize the area of that path. Figure 11-1 denotes the critical switching loop of the buck converter power stage in terms of EMI. The topological architecture of a buck converter means that a particularly high di/dt current path exists in the loop comprising the input capacitor and the integrated MOSFETs of the LM516x-Q1, and it becomes mandatory to reduce the parasitic inductance of this loop by minimizing the effective loop area.

Figure 11-1 Critical Current Loops in the Buck Converter

The input capacitor provides the primary path for the high di/dt components of the current of the high-side MOSFET. Placing a ceramic capacitor as close as possible to the VIN and GND pins is the key to EMI reduction. Keep the trace connecting SW to the inductor as short as possible and just wide enough to carry the load current without excessive heating. Use short, thick traces or copper pours (shapes) for current conduction path to minimize parasitic resistance. Place the output capacitor close to the VOUT side of the inductor, and connect the return terminal of the capacitor to the GND pin and exposed PAD of the LM516x-Q1.