SBOS965D October   2019  – January 2023 LMH32401

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Gain = 2 kΩ
    6. 6.6 Electrical Characteristics: Gain = 20 kΩ
    7. 6.7 Electrical Characteristics: Both Gains
    8. 6.8 Electrical Characteristics: Logic Threshold and Switching Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switched Gain Transimpedance Amplifier
      2. 7.3.2 Clamping and Input Protection
      3. 7.3.3 ESD Protection
      4. 7.3.4 Differential Output Stage
    4. 7.4 Device Functional Modes
      1. 7.4.1 Ambient Light Cancellation (ALC) Mode
      2. 7.4.2 Power-Down Mode (Multiplexer Mode)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGT|16
  • Y|0
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics: Gain = 20 kΩ

VDD = 3.3 V, VOCM = open, VOD = 0 V, CPD (1) = 1 pF, EN = 0 V, GAIN = 3.3 V, IDC_EN = 3.3 V, RL = 100 Ω, and TA = 25℃ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
SSBW Small-signal bandwidth VOUT = 100 mVPP 275 MHz
LSBW Large-signal bandwidth VOUT = 1 VPP 275 MHz
tR, tF Rise and fall time VOUT = 100 mVPP, pulse width = 10 ns 1.3 ns
Slew rate(2) VOUT = 1 VPP, pulse width = 10 ns 700 V/µs
Overload pulse extension (4) IIN = 10 mA, pulse width = 10 ns 4 ns
iN Integrated input current noise f = 250 MHz 49 nARMS
DC PERFORMANCE
Z21 Small-signal transimpedance gain(3) 17 20 22.5 kΩ
VOD Differential output offset voltage
(VOUT– – VOUT+)		 –20 5 20 mV
ΔVOD/ΔTA Differential output offset voltage ±17.5 µV/°C
INPUT PERFORMANCE
RIN Input Resistance 270 350 410 Ω
VIN Default input bias voltage Input pin floating 2.42 2.47 2.52 V
ΔVIN/ΔTA Default input bias voltage drift Input pin floating 1.1 mV/°C
IIN DC input current range Z21 < 3-dB degradation from
IIN = 5 µA		 60 72 µA
(1) Input capacitance of photodiode.
(2) Average of rising and falling slew rate.
(3) Gain measured at the amplifier output pins when driving a 100-Ω resistive load. At higher resistor loads the gain increases.
(4) Pulse width extension measured at 50% of pulse height of a square wave.