SNAS826 April   2022 LMK6C

ADVANCE INFORMATION  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 LMK6P/D Thermal Information
    5. 7.5 LMK6C Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Timing Diagrams
  8. Parameter Measurement Information
    1. 8.1 Device Output Configurations
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bulk Acoustic Wave (BAW)
      2. 9.3.2 Device Block-Level Description
      3. 9.3.3 Function Pin(s)
      4. 9.3.4 Clock Output Interfacing and Termination
      5. 9.3.5 Temperature Stability
      6. 9.3.6 Mechanical Robustness
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Ensuring Thermal Reliability
      2. 12.1.2 Best Practices for Signal Integrity
      3. 12.1.3 Recommended Solder Reflow Profile
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Device Nomenclature
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information
    1. 14.1 Packaging Information
    2. 14.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
  • DLF|4
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Bulk Acoustic Wave (BAW)

TI’s BAW resonator technology uses piezoelectric transduction to generate high-Q resonance at 2.5 GHz. The resonator is defined by the quadrilateral area overlaid by top and bottom electrodes. Alternating high- and low-acoustic impedance layers form acoustic mirrors beneath the resonant body to prevent acoustic energy leakage into the substrate. Furthermore, these acoustic mirrors are also placed on top of the resonator stack to protect the device from contamination and minimize energy leakage into the package materials. This unique dual-Bragg acoustic resonator (DBAR) allows efficient excitation without the need of costly vacuum cavities around the resonator. As a result, TI’s BAW resonator is immune to frequency drift caused by adsorption of surface contaminants and can be directly placed in a non-hermetic plastic package with the oscillator IC in small standard oscillator footprints.