SNOSAZ6C August   2008  – November 2015 LMV831 , LMV832 , LMV834

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics, 3.3 V
    6. 6.6 Electrical Characteristics, 5 V
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Characteristics
      2. 7.3.2 EMIRR
      3. 7.3.3 EMIRR Definition
        1. 7.3.3.1 Coupling an RF Signal to the IN+ Pin
        2. 7.3.3.2 Cell Phone Call
    4. 7.4 Device Functional Modes
      1. 7.4.1 Output Characteristics
      2. 7.4.2 CMRR Measurement
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9 Power Supply Recommendations

For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines, TI recommends that 10-nF capacitors be placed as close as possible to the operational amplifier power supply pins. For single-supply, place a capacitor between V+ and V− supply leads. For dual supplies, place one capacitor between V+ and ground, and one capacitor between V– and ground.

CAUTION

Supply voltages larger than 6 V can permanently damage the device.

The internal RFI filters shunt the received EMI energy to the supply pins. To maximize the effectiveness of the built-in EMI filters, the power supply pin bypassing should have a low impedance, low inductance path to RF ground.

The normally suggested 0.1-µF and larger capacitors tend to be inductive over the effective frequency range of the EMI filters and are not effective at filtering high frequencies (> 50 MHz). Capacitors with high self-resonance frequencies near the GHz range should be placed at the supply pins. This can be accomplished with small (0805 or less) 10 pF to 100 pF SMT ceramic capacitors placed directly at the supply pins to a solid RF ground. These capacitors will provide a direct AC path for the high-frequency EMI to ground. These capacitors are in addition to, and not a replacement for, the recommended low-frequency supply bypassing capacitors.