SNVSBU8A May   2021  – November 2021 LP5860

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Time-Multiplexing Matrix
      2. 8.3.2 Analog Dimming (Current Gain Control)
      3. 8.3.3 PWM Dimming
      4. 8.3.4 ON and OFF Control
      5. 8.3.5 Data Refresh Mode
      6. 8.3.6 Full Addressable SRAM
      7. 8.3.7 Protections and Diagnostics
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
    6. 8.6 Register Maps
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Application
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
      4. 9.2.4 Program Procedure
      5. 9.2.5 Application Performance Plots
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC LP5860, LP5868, LP5866 UNIT
RKP (VQFN)
40 PINS
RθJA Junction-to-ambient thermal resistance 31.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 22.9 °C/W
RθJB Junction-to-board thermal resistance 12.0 °C/W
ΨJT Junction-to-top characterization parameter 0.3 °C/W
ΨJB Junction-to-board characterization parameter 12.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.5 °C/W