over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
|Read and write endurance ||1015||cycles|
|tRetention||Data retention duration||TJ = 25°C||100||years|
|TJ = 70°C||40|
|TJ = 85°C||10|
|IWRITE||Current to write into FRAM||IREAD(1)||nA|
|tREAD||Read time||NWAITSx = 0||1 / fSYSTEM(4)||ns|
|NWAITSx = 1||2 / fSYSTEM(4)|
(1) Writing to FRAM does not require a setup sequence or additional power when compared to reading from FRAM. The FRAM read current (IREAD) is included in the active mode current consumption, IAM,FRAM.
(2) FRAM does not require a special erase sequence.
(3) Writing into FRAM is as fast as reading.
(4) The maximum read (and write) speed is specified by fSYSTEM using the appropriate wait state settings (NWAITSx).