over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
|Read and write endurance ||1015||cycles|
|tRetention||Data retention duration||25°C||100||years|
|IWRITE||Current to write into FRAM(1)||IREAD||nA|
|tREAD||Read time(5)||NWAITSx = 0||1 / fSYSTEM||ns|
|NWAITSx = 1||2 / fSYSTEM||ns|
(1) Writing to FRAM does not require a setup sequence or additional power when compared to reading from FRAM. The FRAM read current IREAD is included in the active mode current consumption, IAM,FRAM.
(2) FRAM does not require a special erase sequence.
(3) N/A = Not applicable
(4) Writing into FRAM is as fast as reading.
(5) The maximum read (and write) speed is specified by fSYSTEM using the appropriate wait state settings (NWAITSx).