SBOS549C April   2011  – March 2021 OPA2376-Q1 , OPA376-Q1 , OPA4376-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: OPA376-Q1
    5. 6.5 Thermal Information: OPA2376-Q1
    6. 6.6 Thermal Information: OPA4376-Q1
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Input Offset Voltage and Input Offset Voltage Drift
      3. 7.3.3 Capacitive Load and Stability
      4. 7.3.4 Common-Mode Voltage Range
      5. 7.3.5 Input and ESD Protection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Basic Amplifier Configurations
      2. 8.1.2 Active Filtering
      3. 8.1.3 Driving an Analog-to-Digital Converter
      4. 8.1.4 Phantom-Powered Microphone
      5. 8.1.5 Speech Bandpass-Filtered Data Acquisition System
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 TINA-TI™ Simulation Software (Free Download)
        2. 11.1.1.2 TI Precision Designs
        3. 11.1.1.3 WEBENCH® Filter Designer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.7 Electrical Characteristics

at TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage 5 25 μV
dVOS/dT Input offset voltage versus temperature TA = –40°C to +85°C 0.26 1 μV/°C
TA = –40°C to +125°C 0.32 2 μV/°C
PSRR Input offset voltage versus power supply VS = 2.2 V to 5.5 V,
VCM < (V+) – 1.3 V		 TA = 25°C 5 20 μV/V
TA = –40°C to +125°C 5 μV/V
Channel separation, dc (dual, quad) 0.5 µV/V
INPUT BIAS CURRENT
IB Input bias current TA = 25°C 0.2 10 pA
TA = –40°C to +125°C See Section 6.8 pA
IOS Input offset current 0.2 10 pA
NOISE
Input voltage noise f = 0.1 Hz to 10 Hz 0.8 μVPP
en Input voltage noise density f = 1 kHz 7.5 nV/√ Hz
in Input current noise f = 1 kHz 2 fA/√ Hz
INPUT VOLTAGE
VCM Common-mode voltage See Figure 6-8 (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio (V–) < VCM < (V+) – 1.3 V 76 90 dB
INPUT CAPACITANCE
Differential 6.5 pF
Common-mode 13 pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain 50 mV < VO < (V+) – 50 mV, RL = 10 kΩ 120 134 dB
100 mV < VO < (V+) – 100 mV, RL = 2 kΩ 120 126 dB
FREQUENCY RESPONSE
GBW Gain-bandwidth product CL = 100 pF, VS = 5.5 V 5.5 MHz
SR Slew rate G = 1, CL = 100 pF, VS = 5.5 V 2 V/μs
tS Settling time 0.1%, 2-V Step , G = 1, CL = 100 pF, VS = 5.5 V 1.6 μs
0.01%, 2-V Step , G = 1, CL = 100 pF, VS = 5.5 V 2 μs
Overload recovery time VIN  × Gain > VS 0.33 μs
THD+N THD + noise VO = 1 VRMS, G = 1, f = 1 kHz, RL = 10 kΩ 0.00027%
OUTPUT
Voltage output swing from rail RL = 10 kΩ TA = 25°C 10 20 mV
TA = –40°C to +125°C 40 mV
RL = 2 kΩ TA = 25°C 40 50 mV
TA = –40°C to +125°C 80 mV
ISC Short-circuit current 30 / –50 mA
CLOAD Capacitive load drive See Section 6.8
RO Open-loop output impedance 150 Ω
POWER SUPPLY
VS Specified voltage 2.2 5.5 V
Operating voltage 2 to 5.5 V
IQ Quiescent current per amplifier IO = 0, VS = 5.5 V, VCM < (V+) – 1.3 V TA = 25°C 760 950 μA
TA = –40°C to +125°C 1 mA