SBOS771A December   2016  – January 2019 OPA4277-SP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions: CFP
    2.     Pin Functions: CDIP
    3. 5.1 Bare Die Information
      1.      Bond Pad Coordinates in Microns
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Protection
      2. 7.3.2 Input Bias Current Cancellation
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

At TJ = 25°C, VS = ±5 V to ±15 V, and RL = 2 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage TJ = 25°C, pre- and post-irradiated ±20 ±65 µV
TJ = –55°C to 125°C, pre-irradiated ±140
dVOS/dT Input offset voltage temperature drift TJ = –55°C to 125°C, pre-irradiated ±0.15 µV/°C
PSRR Input offset voltage vs time 0.2 µV/mo
vs power supply,
VS = ±2 V to ±18 V,
TJ = 25°C, pre- and post-irradiated		 ±0.3 ±1 µV/V
VS = ±2 V to ±18 V,
TJ = –55°C to 125°C		 ±1
Channel separation dc 0.1 µV/V
INPUT BIAS CURRENT
IB Input bias current TJ = –55°C to 125°C ±17.5 nA
TJ = 25°C, pre- and post-irradiated ±17.5
IOS Input offset current TJ = –55°C to 125°C ±17.5 nA
TJ = 25°C, pre- and post-irradiated ±17.5
NOISE
Input voltage noise ƒ = 0.1 to 10 Hz 0.22 µVpp
Input voltage noise density ƒ = 10 Hz 12 nV/√Hz
ƒ = 100 Hz 8
ƒ = 1 kHz 8
ƒ = 10 kHz 8
in Input noise current density ƒ = 1 kHz 0.2 fA/√Hz
INPUT VOLTAGE
VCM Common-mode voltage range TJ = 25°C, pre- and post-irradiated (V–) + 2 (V+) – 2 V
CMRR Common-mode rejection ratio (V–) + 2 V < VCM < (V+) – 2 V,
TJ = 25°C, post-irradiated		 114 140 dB
(V–) + 2 V < VCM < (V+) – 2 V,
TJ = –55°C to 125°C		 114
INPUT IMPEDANCE
Differential 100 || 3 MΩ || pF
Common mode (V–) + 2 V < VCM < (V+) – 2 V 250 || 3 GΩ || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain VO = (VO–) + 0.5 V to (VO+) – 1.2 V,
RL = 10 kΩ		 140 dB
VO = (VO–) + 1.5 V to (VO+) – 1.5 V,
RL = 2 kΩ, TJ = –55°C to 125°C		 118 134
VO = (VO–) + 1.5 V to (VO+) – 1.5 V,
RL = 2 kΩ, TJ = 25°C,
pre- and post-irradiated		 118 134
VO = (VO–) + 3.4 V to (VO+) – 3.4 V,
RL = 600 Ω, VS = ±7 V,
TJ = –55°C to 125°C		 118 134
VO = (VO–) + 3.4 V to (VO+) – 3.4 V,
RL = 600 Ω, VS = ±7 V, TJ = 25°C, pre- and post-irradiated		 118 134
FREQUENCY RESPONSE
GBW Gain-bandwidth product 1 MHz
SR Slew rate 0.8 V/µs
Settling time 0.1%, 10-V step, VS = ±15 V, G = 1 14 µs
0.01%, 10-V step, VS = ±15 V, G = 1 16
THD + N Total harmonic distortion + noise 1 kHz, G = 1, VO = 3.5 Vrms 0.002%
OUTPUT
VO Output voltage RL = 10 kΩ, TJ = 25°C,
pre- and post-irradiated		 (V–) + 0.5 (V+) – 1.2 V
RL = 10 kΩ, TJ = –55°C to 125°C (V–) + 0.5 (V+) – 1.2
RL = 2 kΩ, TJ = 25°C,
pre- and post-irradiated		 (V–) + 1.5 (V+) – 1.5
RL = 2 kΩ, TJ = –55°C to 125°C (V–) + 1.5 (V+) – 1.5
TJ = 25°C, RL = 600 Ω,
pre- and post-irradiated		 (V–) + 3.4 (V+) – 3.4
RL = 600 Ω, VS = ±7 V,
TJ = –55°C to 125°C		 (V–) + 3.4 (V+) – 3.4
ISC Short-circuit current ±35 mA
CLOAD Capacitive load drive ƒ = 350 kHz, IO = 0 See Typical Characteristics
POWER SUPPLY
VS Specified voltage TJ = –55°C to 125°C ±5 ±7 ±15 V
TJ = 25°C, pre- and post-irradiated ±5 ±7 ±15
VS Operating voltage TJ = –55°C to 125°C ±2 ±7 ±18 V
TJ = 25°C, pre- and post-irradiated ±2 ±7 ±18
IQ Quiescent current per amplifier IO = 0, TJ = 25°C,
pre- and post-irradiated		 ±790 ±850 µA
IO = 0, TJ = –55°C to 125°C ±900