SBOS622A July   2018  – October 2018 OPA855

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      High-Speed Time-of-Flight Receiver
      2.      Photodiode Capacitance vs Bandwidth and Noise
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input and ESD Protection
      2. 9.3.2 Feedback Pin
      3. 9.3.3 Wide Gain-Bandwidth Product
      4. 9.3.4 Slew Rate and Output Stage
    4. 9.4 Device Functional Modes
      1. 9.4.1 Split-Supply and Single-Supply Operation
      2. 9.4.2 Power-Down Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Overview

The ultra-wide, 8-GHz gain bandwidth product (GBWP) of the OPA855, combined with the broadband voltage noise of 0.98 nV/√Hz, produces a viable amplifier for wideband transimpedance applications, high-speed data acquisition systems, and applications with weak signal inputs that require low-noise and high-gain front ends. The OPA855 combines multiple features to optimize dynamic performance. In addition to the wide, small-signal bandwidth, the OPA855 has 850 MHz of large-signal bandwidth (2 VPP), and a slew rate of 2750 V/µs, making the device a viable option for high-speed pulsed applications.

The OPA855 is offered in a 2-mm × 2-mm, 8-pin WSON package that features a feedback (FB) pin for a simple feedback network connection between the amplifiers output and inverting input. Excess capacitance on an amplifiers input pin can reduce phase margin causing instability. This problem is exacerbated in the case of very wideband amplifiers like the OPA855. To reduce the effects of stray capacitance on the input node, the OPA855 pinout features an isolation pin (NC) between the feedback and inverting input pins that increases the physical spacing between them thereby reducing parasitic coupling at high frequencies. The OPA855 also features a very low capacitance input stage with only 0.8-pF of total input capacitance.