SLOS412D April   2003  – November 2014 RC4580

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Operating Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Unity-Gain Bandwidth
      2. 7.3.2 Common-Mode Rejection Ratio
      3. 7.3.3 Slew Rate
    4. 7.4 Device Functional Mode
  8. Application and Implementation
    1. 8.1 Typical Application
      1. 8.1.1 Design Requirements
      2. 8.1.2 Detailed Design Procedure
        1. 8.1.2.1 Amplifier Selection
        2. 8.1.2.2 Passive Component Selection
      3. 8.1.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
  • PW|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage ±18 V
VI Input voltage (any input) ±15 V
VID Differential input voltage ±30 V
IO Output current ±50 mA
TA Ambient temperature range –40 125 °C
Tstg Storage temperature range –60 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –60 125 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 0 1000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 0 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VCC+ Supply voltage 2 16 V
VCC– –2 –16
VICR Input common-mode voltage range –13.5 13.5 V
TA Operating free-air temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) RC4580 UNIT
D PW
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 109 163 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 55.7 38
RθJB Junction-to-board thermal resistance 49 90.6
ψJT Junction-to-top characterization parameter 10.6 1.3
ψJB Junction-to-board characterization parameter 48.6 88.9
RθJC(bot) Junction-to-case (bottom) thermal resistance
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VCC± = ±15 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIO Input offset voltage RS = < 10 kΩ 0.5 3 mV
IIO Input offset current 5 200 nA
IIB Input bias current 100 500 nA
AVD Large-signal differential voltage amplification RL ≥ 2 kΩ, VO = ±10 V 90 110 dB
VCM Output voltage swing RL ≥ 2 kΩ ±12 ±13.5 V
VICR Common-mode input voltage ±12 ±13.5 V
CMRR Common-mode rejection ratio RS ≤ 10 kΩ 80 110 dB
kSVR Supply-voltage rejection ratio(1) RS ≤ 10 kΩ 80 110 dB
ICC Total supply current (all amplifiers) 6 9 mA
(1) Measured with VCC± varied simultaneously

6.6 Operating Characteristics

VCC± = ±15 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS TYP UNIT
SR Slew rate at unity gain RL ≥ 2 kΩ 5 V/μs
GBW Gain-bandwidth product f = 10 kHz 12 MHz
THD Total harmonic distortion VO = 5 V, RL = 2 kΩ, f = 1 kHz, AVD = 20 dB 0.0005%
Vn Equivalent input noise voltage RIAA, RS ≤ 2.2 kΩ, 30-kHz LPF 0.8 μVrms

6.7 Typical Characteristics

g_vo_rl_los412.gifFigure 1. Maximum Output Voltage Swing vs Load Resistance
g_outputvolt_io_los412.gifFigure 3. Output Voltage Swing vs Output Current
g_icc_ta_los412.gifFigure 5. Operating Current vs Temperature
g_vio_ta_los412.gifFigure 7. Input Offset Voltage vs Temperature
g_vo_vcc_los412.gifFigure 9. Maximum Output Voltage Swing vs Operating Voltage
g_thd_vo_los412.gifFigure 11. Total Harmonic Distortion vs Output Voltage
g_vo_freq_los412.gifFigure 2. Maximum Ouput Voltage Swing vs Frequency
g_vn_freq_los412.gifFigure 4. Equivalent Input Noise Voltage vs Frequency
g_vo_ta_los412.gifFigure 6. Output Voltage Swing vs Temperature
g_vo_vcc_los412.gifFigure 8. Input Bias Current vs Temperature
g_opcurrent_vcc_los412.gifFigure 10. Operating Current vs Operating Voltage
g_voltgain_phase_freq_los412.gifFigure 12. Voltage Gain, Phase vs Frequency