SBVS032H March   2002  – February 2018 REF3012 , REF3020 , REF3025 , REF3030 , REF3033 , REF3040

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Typical Application
      2.      Dropout Voltage vs Load Current
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Supply Voltage
      2. 8.3.2 Thermal Hysteresis
      3. 8.3.3 Temperature Drift
      4. 8.3.4 Noise Performance
      5. 8.3.5 Long-Term Stability
      6. 8.3.6 Load Regulation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Negative Reference Voltage
      2. 8.4.2 Data Acquisition
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Overview

The REF30xx is a series, CMOS, precision bandgap voltage reference. Its basic topology is shown in the Functional Block Diagram section. Transistors Q1 and Q2 are biased so that the current density of Q1 is greater than that of Q2. The difference of the two base-emitter voltages, Vbe1 – Vbe2, has a positive temperature coefficient and is forced across resistor R1. This voltage is gained up and added to the base-emitter voltage of Q2, which has a negative coefficient. The resulting output voltage is virtually independent of temperature. The curvature of the bandgap voltage, as shown in Figure 3, is due to the slightly nonlinear temperature coefficient of the base-emitter voltage of Q2.