SNOSBA3D June   2011  – May 2015 SM74104


  1. Features
  2. Typical Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics
    6. 5.6 Typical Performance Characteristics
  6. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Setting the Delay Timer with RT
    4. 6.4 Device Functional Modes
      1. 6.4.1 Startup and UVLO
    5. 6.5 Power Dissipation Considerations
  7. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
  8. Power Supply Recommendations
  9. Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Trademarks
    2. 10.2 Electrostatic Discharge Caution
    3. 10.3 Glossary

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Renewable Energy Grade
  • Drives both a High Side and Low Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges with Programmable Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118V DC
  • Fast Turn-Off Propagation Delay (25 ns Typical)
  • Drives 1000 pF Loads with 15 ns Rise and Fall Times
  • Supply Rail Under-Voltage Lockout

2 Typical Applications

  • Current Fed Push-Pull Power Converters
  • High Voltage Buck Regulators
  • Active Clamp Forward Power Converters
  • Half and Full Bridge Converters

3 Description

The SM74104 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck configuration. The floating high-side driver is capable of working with supply voltages up to 100V. The high side and low side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails.

Device Information(1)

SM74104 WSON (10) 4.0 mm x 4.0 mm
SOIC (8) 4.9 mm x 3.9 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.
SM74104 30160009.gifSM74104 Driving MOSFETs Connected in Synchronous Buck Configuration