SLLS562O august   2009  – july 2023 SN65HVD3082E , SN65HVD3085E , SN65HVD3088E , SN75HVD3082E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information, SN65HVD308xE
    5. 6.5  Thermal Information, SNx5HVD3082E
    6. 6.6  Electrical Characteristics: Driver
    7. 6.7  Electrical Characteristics: Receiver
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics: Driver
    10. 6.10 Switching Characteristics
    11. 6.11 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Data Rate and Bus Length
        2. 9.2.1.2 Stub Length
        3. 9.2.1.3 Bus Loading
        4. 9.2.1.4 Receiver Fail-safe
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Power Usage in an RS-485 Transceiver
        2. 9.2.2.2 Low-Power Shutdown Mode
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations for IC Packages
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3 Feature Description

The SNx5HVD308xE provides internal biasing of the receiver input thresholds for open-circuit, bus-idle, or short-circuit fail-safe conditions. It features a typical hysteresis of 30 mV in order to improve noise immunity. Internal ESD protection circuits protect the transceiver bus terminals against ±15-kV Human Body Model (HBM) electrostatic discharges.

The devices protect themselves against damage due to overtemperature conditions, through the use of a thermal shutdown feature. Thermal shutdown is entered at 165°C (nominal) and causes the device to enter a low-power state with high-impedance outputs.