SCES463H June   2003  – December 2021 SN74LVC1G3157-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Analog Switch Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|6
  • DCK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSVCCMINTYP(1)MAXUNIT
ronON-state switch resistance(2)See Figure 7-1
and Figure 6-1		VI = 0 V,IO = 4 mA1.65 V1120Ω
VI = 1.65 V,IO = –4 mA1550
VI = 0 V,IO = 8 mA2.3 V812
VI = 2.3 V,IO = –8 mA1130
VI = 0 V,IO = 24 mA3 V79.5
VI = 3 V,IO = –24 mA920
VI = 0 V,IO = 30 mA4.5 V67.5
VI = 2.4 V,IO = –30 mA712
VI = 4.5 ,IO = –30 mA715
rrangeON-state switch resistance
over signal range(2)(3)		0 ≤ VBn ≤ VCC
(see Figure 7-1 and Figure 6-1)		IA = –4 mA1.65 V140Ω
IA = –8 mA2.3 V45
IA = –24 mA3 V18
IA = –30 mA4.5 V10
ΔronDifference in on-state resistance between switches(2)(4)(5)See Figure 7-1VBn = 1.15 V,IA = –4 mA1.65 V0.5Ω
VBn = 1.6 V,IA = –8 mA2.3 V0.1
VBn = 2.1 V,IA = –24 mA3 V0.1
VBn = 3.15 V,IA = –30 mA4.5 V0.1
ron(flat)ON-state resistance flatness(2)(4)(6)0 ≤ VBn ≤ VCCIA = –4 mA1.65 V110Ω
IA = –8 mA2.3 V26
IA = –24 mA3 V9
IA = –30 mA4.5 V4
Ioff(7)OFF-state switch leakage current0 ≤ VI, VO ≤ VCC (see Figure 7-2)1.65 V
to 5.5 V		±1μA
±0.05±1(1)
IS(on)ON-state switch leakage currentVI = VCC or GND, VO = Open (see Figure 7-3)5.5 V±1μA
±0.1(1)
IINControl input current0 ≤ VIN ≤ VCC0 V
to 5.5 V		±1μA
±0.05±1(1)
ICCSupply currentVIN = VCC or GND5.5 V110μA
ΔICCSupply-current changeVIN = VCC – 0.6 V5.5 V500μA
CinControl input capacitanceS5 V2.7pF
Cio(off)Switch I/O capacitanceBn5 V5.2pF
Cio(on)Switch I/O capacitanceBn5 V17.3pF
A17.3
(1) TA = 25°C
(2) Measured by the voltage drop between I/O pins at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages on the two (A or B) ports.
(3) Specified by design
(4) Δron = ron(max) – ron(min) measured at identical VCC, temperature, and voltage levels
(5) This parameter is characterized, but not tested in production.
(6) Flatness is defined as the difference between the maximum and minimum values of ON-state resistance over the specified range of conditions.
(7) Ioff is the same as IS(off) (OFF-state switch leakage current).