SCES424M Data sheet

SCES424M January 2003 – August 2022 SN74LVC1G3157

PRODUCTION DATA

Package Options

Mechanical Data (Package|Pins)

DRY|6
- MPDS221F
DSF|6
- MPDS301G
YZP|6
- MXBG347
DTB|6
- MPSS095B
DCK|6
- MPDS114C
DRL|6
- MPDS159F
DBV|6
- MPDS026O

Thermal pad, mechanical data (Package|Pins)

DRY|6
- QFND138E
DCK|6
- QFND228B

Orderable Information

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER			TEST CONDITIONS			V_CC	T_A = -40 to 85°C			T_A = -40 to 125°C			UNIT
PARAMETER			TEST CONDITIONS			V_CC	MIN	TYP⁽¹⁾	MAX	MIN	TYP⁽¹⁾	MAX	UNIT
r_on	ON-state switch resistance⁽²⁾		See Figure 6-1 and Figure 7-1	V_I = 0 V	I_O = 4 mA	1.65 V		11	20		11	20	Ω
				V_I = 1.65 V	I_O = –4 mA	1.65 V		15	50		15	50
				V_I = 0 V	I_O = 8 mA	2.3 V		8	12		8	12
				V_I = 2.3 V	I_O = –8 mA	2.3 V		11	30		11	30
				V_I = 0 V	I_O = 24 mA	3 V		7	9		7	9
				V_I = 3 V	I_O = –24 mA	3 V		9	20		9	20
				V_I = 0 V	I_O = 30 mA	4.5 V		6	7		6	7
				V_I = 2.4 V	I_O = –30 mA			7	12		7	12
				V_I = 4.5 V	I_O = –30 mA			7	15		7	15
r_range	ON-state switch resistance over signal range⁽²⁾⁽³⁾		0 ≤ V_Bn ≤ V_CC (see Figure 6-1 and Figure 7-1)		I_A = –4 mA	1.65 V			140			140	Ω
					I_A = –8 mA	2.3 V			45			45
					I_A = –24 mA	3 V			18			18
					I_A = –30 mA	4.5 V			10			10
Δr_on	Difference of ON-state resistance between switches⁽²⁾⁽⁴⁾⁽⁵⁾		See Figure 7-1	V_Bn = 1.15 V	I_A = –4 mA	1.65 V		0.5			0.5		Ω
				V_Bn = 1.6 V	I_A = –8 mA	2.3 V		0.1			0.3
				V_Bn = 2.1 V	I_A = –24 mA	3 V		0.1			0.3
				V_Bn = 3.15 V	I_A = –30 mA	4.5 V		0.1			0.2
r_on(flat)	ON resistance flatness⁽²⁾⁽⁴⁾⁽⁶⁾		0 ≤ V_Bn ≤ V_CC		I_A = –4 mA	1.65 V		110			110		Ω
					I_A = –8 mA	2.3 V		26			40
					I_A = –24 mA	3 V		9			10
					I_A = –30 mA	4.5 V		4			5
I_off⁽⁷⁾	OFF-state switch leakage current		0 ≤ V_I, V_O ≤ V_CC (see Figure 7-2 )			1.65 V to 5.5 V			±1			±1	µA
I_off⁽⁷⁾	OFF-state switch leakage current		0 ≤ V_I, V_O ≤ V_CC (see Figure 7-2 )			1.65 V to 5.5 V		±0.05	±0.1⁽¹⁾		±0.05	±0.1	µA
I_S(on)	ON-state switch leakage current		V_I = V_CC or GND, V_O = Open (see Figure 7-3)			5.5 V			±1			±1	µA
I_S(on)	ON-state switch leakage current		V_I = V_CC or GND, V_O = Open (see Figure 7-3)			5.5 V			±0.1⁽¹⁾			±0.1⁽¹⁾	µA
I_IN	Control input current		0 ≤ V_IN ≤ V_CC			0 V to 5.5 V			±1			±1	µA
I_IN	Control input current		0 ≤ V_IN ≤ V_CC			0 V to 5.5 V		±0.05	±0.1⁽¹⁾		±0.05	±0.1	µA
I_CC	Supply current		S = V_CC or GND			5.5 V		1	10			35	µA
ΔI_CC	Supply-current change		S = V_CC – 0.6 V			5.5 V			500			500	µA
C_i	Control input capacitance	S				5 V		2.7			2.7		pF
C_io(off)	Switch input/output capacitance	Bn				5 V		5.2			5.2		pF
C_io(on)	Switch input/output capacitance	Bn				5 V		17.3			17.3		pF
C_io(on)	Switch input/output capacitance	A				5 V		17.3			17.3		pF

(1) T_A = 25°C

(2) Measured by the voltage drop between I/O pins at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages on the two (A or B) ports.

(3) Specified by design

(4) Δr_on = r_on(max) – r_on(min) measured at identical V_CC, temperature, and voltage levels

(5) This parameter is characterized, but not production tested.

(6) Flatness is defined as the difference between the maximum and minimum values of on-state resistance over the specified range of conditions.

(7) I_off is the same as I_S(off) (off-state switch leakage current).