SLLS351F April   2002  – July 2021 SN65C3221 , SN75C3221

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions (1)
      1. 6.3.1 Thermal Information
    4. 6.4  Electrical Characteristics
    5. 6.5  Electrical Characteristics - Driver
    6. 6.6  Switching Characteristics - Driver
    7. 6.7  Electrical Characteristics - Receiver
    8. 6.8  Switching Characteristics - Receiver
    9. 6.9  Electrical Characteristics - Auto-Powerdown
    10. 6.10 Switching Characteristics - Auto-Powerdown
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DB|16
  • PW|16
  • DW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Switching Characteristics - Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(3) (see Figure 9-1)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
Maximum data rate
(see Figure 7-1)		 RL = 3 kΩ CL = 1000 pF 250 kbit/s
CL = 250 pF, VCC = 3 V to 4.5 V 1000
CL = 1000 pF, VCC = 4.5 V to 5.5 V 1000
tsk(p) Pulse skew(2) CL = 150 pF to 2500 pF RL = 3 kΩ to 7 kΩ, See Figure 7-2 100 ns
SR(tr)

Slew rate,
transition region
(see Figure 7-1)

VCC = 3.3 V,

RL = 3 kΩ to 7 kΩ

 CL = 150 pF to 1000 pF 18 150 V/μs
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
(3) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.