SLOS081M February   1977  – December 2021 TL081 , TL081A , TL081B , TL081H , TL082 , TL082A , TL082B , TL082H , TL084 , TL084A , TL084B , TL084H

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings: TL08xH
    2. 6.2  Absolute Maximum Ratings: All Other Devices
    3. 6.3  ESD Ratings: TL08xH
    4. 6.4  ESD Ratings: All Other Devices
    5. 6.5  Recommended Operating Conditions: TL08xH
    6. 6.6  Recommended Operating Conditions: All Other Devices
    7. 6.7  Thermal Information for Single Channel: TL081H
    8. 6.8  Thermal Information for Dual Channel: TL082H
    9. 6.9  Thermal Information for Quad Channel: TL084H
    10. 6.10 Thermal Information: All Other Devices
    11. 6.11 Electrical Characteristics: TL08xH
    12. 6.12 Electrical Characteristics for TL08xC, TL08xxC, and TL08xI
    13. 6.13 Electrical Characteristics for TL08xM and TL084x
    14. 6.14 Switching Characteristics
    15. 6.15 Dissipation Rating Table
    16. 6.16 Typical Characteristics: TL08xH
    17. 6.17 Typical Characteristics: All Other Devices
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Total Harmonic Distortion
      2. 8.3.2 Slew Rate
    4. 8.4 Device Functional Modes
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Inverting Amplifier Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 System Examples
      1. 9.3.1 General Applications
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.1 Layout Guidelines

For best operational performance of the device, use good PCB layout practices, including:

  • Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance power sources local to the analog circuitry.
    • Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-supply applications.
  • Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital and analog grounds, paying attention to the flow of the ground current.
  • To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as opposed to in parallel with the noisy trace.
  • Place the external components as close to the device as possible. Keeping RF and RG close to the inverting input minimizes parasitic capacitance, as shown in Section 11.2.
  • Keep the length of input traces as short as possible. Always remember that the input traces are the most sensitive part of the circuit.
  • Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce leakage currents from nearby traces that are at different potentials.