SNOSDB1E june   2021  – april 2023 TLV3601 , TLV3602 , TLV3603 , TLV3603E

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Diagrams
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inputs
      2. 7.4.2 Push-Pull (Single-Ended) Output
      3. 7.4.3 Known Startup Condition
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Adjustable Hysteresis
      2. 8.1.2 Capacitive Loads
      3. 8.1.3 Latch Functionality
    2. 8.2 Typical Application
      1. 8.2.1 Implementing Hysteresis
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Optical Receiver
      3. 8.2.3 Over-Current Latch Condition
      4. 8.2.4 External Trigger Function for Oscilloscopes
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Detailed Design Procedure

For the TLV3603(E), the hysteresis vs. resistance curve (Figure 8-2) can be used as a guidance to set the desired amount of hysteresis. Figure 8-2 shows that for a 30-mV hysteresis, a 150 kΩ resistor must be placed from the LE/HYS pin to VEE.

For the TLV3601 and TLV3602, the following procedure can be used to add external hysteresis for a non-inverting configuration. Note that VHYST << VREF, so VHYST can be ignored and is not included in the following equations for simpler calculation.

The equivalent resistor networks when the output is high and low are shown in Figure 8-7.

GUID-20210819-SS0I-TXHD-CGD0-XH3Z33FTJLQR-low.svgFigure 8-7 Equivalent Resistor Networks for Non-Inverting Configuration with Hysteresis.

When VIN is less than VREF, the output is low. For the output to switch from low to high, VIN must rise above the VH threshold. Use Equation 1 to calculate VH.

Equation 1. VH = (R1 x VREF/R2) + VREF

When VIN is greater than VREF, the output is high. For the comparator to switch back to a low state, VIN must drop below the VL threshold. Use Equation 2 to calculate VL.

Equation 2. VL = [VREF (R1 + R2) - VCC x R1] / R2

The hysteresis of this circuit is the difference between VH and VL, as shown in Equation 3.

Equation 3. ΔVIN = VHYS = (VCC x R1/R2)

Select a value for R2. Plug in given values for VCC, VREF, VH, and VL. For the given example, R2 = 10 kΩ, and R1 is solved as 60 Ω.

For more information, please see Application Notes SNOA997 "Inverting Comparator with Hysteresis Circuit", SBOA313 "Non-Inverting Comparator With Hysteresis Circuit", SBOA219 "Comparator with and without hysteresis circuit".