SBOS837A November   2016  – January 2019 TLV2314-Q1 , TLV314-Q1 , TLV4314-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      EMIRR vs Frequency
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions: TLV314-Q1
    2.     Pin Functions: TLV2314-Q1
    3.     Pin Functions: TLV4314-Q1
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: TLV314-Q1
    5. 6.5 Thermal Information: TLV2314-Q1
    6. 6.6 Thermal Information: TLV4314-Q1
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Rail-to-Rail Input
      3. 7.3.3 Rail-to-Rail Output
      4. 7.3.4 Common-Mode Rejection Ratio (CMRR)
      5. 7.3.5 Capacitive Load and Stability
      6. 7.3.6 EMI Susceptibility and Input Filtering
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 System Examples
  9. 9 Power Supply Recommendations
    1. 9.1 Input and ESD Protection
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.