SNVSBY3A November   2020  – April 2021 TLV840-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage (VDD)
        1. 8.3.1.1 VDD Hysteresis
        2. 8.3.1.2 VDD Transient Immunity
      2. 8.3.2 User-Programmable Reset Time Delay
      3. 8.3.3 Manual Reset (MR) Input
      4. 8.3.4 Output Logic
        1. 8.3.4.1 RESET Output, Active-Low
        2. 8.3.4.2 RESET Output, Active-High
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation (VDD > VPOR)
      2. 8.4.2 Below Power-On-Reset (VDD < VPOR)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design 1: Dual Rail Monitoring with Power-up Sequencing
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Application Curve: Adjusting Output Reset Delay on TLV840EVM
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC(1) TLV840-Q1 UNIT
DBV (SOT23-5)
5 PINS
RθJA Junction-to-ambient thermal resistance 193.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 117.9 °C/W
RθJB Junction-to-board thermal resistance 98.5 °C/W
ψJT Junction-to-top characterization parameter 43.4 °C/W
ψJB Junction-to-board characterization parameter 97.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.