SBOS833R October   2017  – November 2021 TLV9001 , TLV9002 , TLV9004

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information: TLV9001
    5. 7.5  Thermal Information: TLV9001S
    6. 7.6  Thermal Information: TLV9002
    7. 7.7  Thermal Information: TLV9002S
    8. 7.8  Thermal Information: TLV9004
    9. 7.9  Thermal Information: TLV9004S
    10. 7.10 Electrical Characteristics
    11. 7.11 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Rail-to-Rail Input
      3. 8.3.3 Rail-to-Rail Output
      4. 8.3.4 EMI Rejection
    4. 8.4 Overload Recovery
    5. 8.5 Shutdown
    6. 8.6 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 TLV900x Low-Side, Current Sensing Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Single-Supply Photodiode Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Input and ESD Protection
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DPW|5
  • DBV|5
  • DBV|6
  • DCK|5
  • DCK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.5 Shutdown

The TLV9001S, TLV9002S, and TLV9004S devices feature SHDN pins that disable the op amp, placing it into a low-power standby mode. In this mode, the op amp typically consumes less than 1 µA. The SHDN pins are active low, meaning that shutdown mode is enabled when the input to the SHDN pin is a valid logic low.

The SHDN pins are referenced to the negative supply voltage of the op amp. The threshold of the shutdown feature lies around 620 mV (typical) and does not change with respect to the supply voltage. Hysteresis has been included in the switching threshold to ensure smooth switching characteristics. To ensure optimal shutdown behavior, the SHDN pins should be driven with valid logic signals. A valid logic low is defined as a voltage between V– and V– + 0.2 V. A valid logic high is defined as a voltage between V– + 1.2 V and V+. The shutdown pin circuitry includes a pull-up resistor, which will inherently pull the voltage of the pin to the positive supply rail if not driven. Thus, to enable the amplifier, the SHDN pins should either be left floating or driven to a valid logic high. To disable the amplifier, the SHDN pins must be driven to a valid logic low. While we highly recommend that the shutdown pin be connected to a valid high or a low voltage or driven, we have included a pull-up resistor connected to VCC. The maximum voltage allowed at the SHDN pins is (V+) + 0.5 V. Exceeding this voltage level will damage the device.

The SHDN pins are high-impedance CMOS inputs. Dual op amp versions are independently controlled and quad op amp versions are controlled in pairs with logic inputs. For battery-operated applications, this feature may be used to greatly reduce the average current and extend battery life. The enable time is 70 µs for full shutdown of all channels; disable time is 4 µs. When disabled, the output assumes a high-impedance state. This architecture allows the TLV9002S and TLV9004S to operate as a gated amplifier (or to have the device output multiplexed onto a common analog output bus). Shutdown time (tOFF) depends on loading conditions and increases as load resistance increases. To ensure shutdown (disable) within a specific shutdown time, the specified 10-kΩ load to midsupply (VS / 2) is required. If using the TLV9001S, TLV9002S, or TLV9004S without a load, the resulting turnoff time significantly increases.