SBOS833R October   2017  – November 2021 TLV9001 , TLV9002 , TLV9004

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information: TLV9001
    5. 7.5  Thermal Information: TLV9001S
    6. 7.6  Thermal Information: TLV9002
    7. 7.7  Thermal Information: TLV9002S
    8. 7.8  Thermal Information: TLV9004
    9. 7.9  Thermal Information: TLV9004S
    10. 7.10 Electrical Characteristics
    11. 7.11 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Rail-to-Rail Input
      3. 8.3.3 Rail-to-Rail Output
      4. 8.3.4 EMI Rejection
    4. 8.4 Overload Recovery
    5. 8.5 Shutdown
    6. 8.6 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 TLV900x Low-Side, Current Sensing Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Single-Supply Photodiode Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Input and ESD Protection
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DPW|5
  • DBV|5
  • DBV|6
  • DCK|5
  • DCK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

EMI Rejection

The TLV900x uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI from sources such as wireless communications and densely-populated boards with a mix of analog signal chain and digital components. EMI immunity can be improved with circuit design techniques; the TLV900x benefits from these design improvements. Texas Instruments has developed the ability to accurately measure and quantify the immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to 6 GHz. Figure 8-1 shows the results of this testing on the TLV900x. Table 8-1 shows the EMIRR IN+ values for the TLV900x at particular frequencies commonly encountered in real-world applications. The EMI Rejection Ratio of Operational Amplifiers application report contains detailed information on the topic of EMIRR performance as it relates to op amps and is available for download from www.ti.com.

GUID-760FF8F6-D9B2-4FF2-8138-80B1FC284080-low.gifFigure 8-1 EMIRR Testing
Table 8-1 TLV900x EMIRR IN+ For Frequencies of Interest
FREQUENCYAPPLICATION OR ALLOCATIONEMIRR IN+
400 MHzMobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF) applications59.5 dB
900 MHzGlobal system for mobile communications (GSM) applications, radio communication, navigation, GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications68.9 dB
1.8 GHzGSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz)77.8 dB
2.4 GHz802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz)78.0 dB
3.6 GHzRadiolocation, aero communication and navigation, satellite, mobile, S-band88.8 dB